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JS28F512P33EFA 参数 Datasheet PDF下载

JS28F512P33EFA图片预览
型号: JS28F512P33EFA
PDF下载: 下载PDF文件 查看货源
内容描述: [Micron Parallel NOR Flash Embedded Memory (P33-65nm)]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 92 页 / 987 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P33-65nm  
Common Flash Interface  
Table 29: Partition Region 1 Information (Continued)  
Hex Offset  
P = 10Ah  
Description  
Address  
Bottom/Top  
Optional Flash features and commands  
Length  
Bottom/Top  
(P+30)h  
(P+31)h  
Partition 1 (erase block type 1):  
Minimum block erase cycles x 1000  
2
13A:  
13B:  
(P+32)h  
(P+33)h  
Partition 1 (erase block type 1) bits per cell; internal ECC:  
Bits 0 - 3 = bits per cell in erase region  
Bit 4 = reserved for “internal ECC used” (1=yes, 0=no)  
Bit 5 - 7 = reserved for future use  
1
1
13C:  
Partition 1 (erase block type 1) page mode and synchronous  
mode capabilities:  
13D:  
Bits 0 = page-mode host reads permitted (1=yes, 0=no)  
Bit 1 = synchronous host reads permitted (1=yes, 0=no)  
Bit 2 = synchronous host writes permitted (1=yes, 0=no)  
Bit 3 - 7 = reserved for future use  
(P+34)h  
(P+35)h  
(P+36)h  
(P+37)h  
(P+38)h  
(P+39)h  
Partition 1 (erase block type 1) programming region information:  
Bits 0 - 7 = x, 2x: programming region aligned size (bytes)  
Bit 8-14 = reserved for future use  
Bit 15 = legacy flash operation; ignore 0:7  
Bit 16 - 23 = y: control mode valid size (bytes)  
Bit 24 - 31 = reserved for future use  
6
13E:  
13F:  
140:  
141:  
142:  
143:  
Bit 32 - 39 = z: control mode invalid size (bytes)  
Bit 40 - 46 = reserved for future use  
Bit 47 = legacy flash operation (ignore 23:16 and 39:32)  
(P+3A)h  
(P+3B)h  
(P+3C)h  
(P+3D)h  
Partition 1 erase block type 2 information:  
Bits 0-15 = y, y+1 = Number of identical-size erase blocks in a par-  
tition.  
Bits 16 - 31 = z, where region erase block(s) size is z x 256 bytes.  
(bottom parameter device only)  
4
144:  
145:  
146:  
147:  
(P+3E)h  
(P+3F)h  
Partition 1 (erase block type 2)  
Minimum block erase cycles x 1000  
2
1
148:  
149:  
14A:  
(P+40)h  
Partition 1 (erase block type 2) bits per cell, internal EDAC:  
Bits 0 - 3 = bits per cell in erase region  
Bit 4 = reserved for “internal ECC used” (1=yes, 0=no)  
Bits 5 - 7 = reserved for future use  
(P+41)h  
Partition 1 (erase block type 2) page mode and synchronous  
mode capabilities:  
1
14B:  
Bit 0 = page-mode host reads permitted (1=yes, 0=no)  
Bit 1 = synchronous host reads permitted (1=yes, 0=no)  
Bit 2 = synchronous host writes permitted (1=yes, 0=no)  
Bits 3-7 = reserved for future use  
PDF: 09005aef845667b8  
p33_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. C 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
58  
© 2013 Micron Technology, Inc. All rights reserved.  
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