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JR28F064M29EWHB 参数 Datasheet PDF下载

JR28F064M29EWHB图片预览
型号: JR28F064M29EWHB
PDF下载: 下载PDF文件 查看货源
内容描述: [Parallel NOR Flash Embedded Memory]
分类和应用:
文件页数/大小: 87 页 / 1118 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash  
Signal Descriptions  
Signal Descriptions  
The signal description table below is a comprehensive list of signals for this device fami-  
ly. All signals listed may not be supported on this device. See Signal Assignments for in-  
formation specific to this device.  
Table 4: Signal Descriptions  
Name  
Type  
Description  
A[MAX:0]  
Input  
Address: Selects the cells in the array to access during READ operations. During WRITE oper-  
ations, they control the commands sent to the command interface of the program/erase con-  
troller.  
CE#  
Input  
Chip enable: Activates the device, enabling READ and WRITE operations to be performed.  
When CE# is HIGH, the device goes to standby and data outputs are at HIGH-Z.  
OE#  
WE#  
Input  
Input  
Input  
Output enable: Controls the bus READ operation.  
Write enable: Controls the bus WRITE operation of the command interface.  
VPP/WP#  
VPP/Write Protect: Provides WRITE PROTECT function and VPPH function. These functions  
protect the lowest or highest block or top two blocks or bottom two blocks, enable the de-  
vice to enter unlock bypass mode and accelerate program speed, respectively. (Refer to Hard-  
ware Protection, Bypass Operations, and Program Operations for details.)  
A 0.1μF capacitor should be connected between VPP/WP# and VSS to decouple the current  
surges from the power supply when VPPH is applied. The PCB track widths must be sufficient  
to carry the currents required during PROGRAM and ERASE operation when VPPH is applied  
(see DC Characteristics).  
BYTE#  
RST#  
Input  
Input  
Byte/word organization select: Switches between x8 and x16 bus modes. When BYTE# is  
LOW, the device is in x8 mode; when HIGH, the device is in x16 mode.  
Reset: Applies a hardware reset to the device, which is achieved by holding RST# LOW for at  
least tPLPX. After RST# goes HIGH, the device is ready for READ and WRITE operations (after  
tPHEL or tRHEL, whichever occurs last). See RESET AC Specifications for more details.  
DQ[7:0]  
I/O  
I/O  
Data I/O: Outputs the data stored at the selected address during a READ operation. During  
WRITE operations, they represent the commands sent to the command interface of the inter-  
nal state machine.  
DQ[14:8]  
Data I/O: Outputs the data stored at the selected address during a READ operation when  
BYTE# is HIGH. When BYTE# is LOW, these pins are not used and are High-Z. During WRITE  
operations, these bits are not used. When reading the status register, these bits should be ig-  
nored.  
DQ15/A-1  
I/O  
Data I/O or address input: When the device operates in x16 bus mode, this pin behaves as  
data I/O, together with DQ[14:8]. When the device operates in x8 bus mode, this pin behaves  
as the least significant bit of the address.  
Except where stated explicitly otherwise, DQ15 = data I/O (x16 mode); A-1 = address input (x8  
mode).  
PDF: 09005aef84dc44a7  
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
13  
© 2012 Micron Technology, Inc. All rights reserved.