32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash
Electrical Specifications – Program/Erase Characteristics
Electrical Specifications – Program/Erase Characteristics
Table 40: Program/Erase Characteristics
Buffer
Size
Parameter
Byte
Word
Min
Typ1, 2
0.5
20
Max2
4
Unit
s
Block erase
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Erase suspend latency
Block erase timeout
25
µs
µs
µs
µs
50
–
–
–
Byte program
Single-byte program
15
175
200
Double-/
–
10
quadruple-/
octuple-byte program
Byte write to buffer program
32
64
32
64
256
1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
70
85
200
200
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
256
32
–
160
2.19
1.33
0.625
15
710
Effective write to buffer program
per byte
–
6.25
3.125
2.77
175
64
1
–
256
–
1
–
Word program
Single-word program
–
–
Word write to buffer program
16
–
16
32
128
256
256
1
70
200
32
–
85
200
128
256
256
16
–
160
284
160
4.375
2.66
1.25
1.11
0.625
710
–
1280
800
Full buffer program with VPPH
–
Effective write to buffer program
per word
–
12.5
6.25
5.55
5
32
–
1
128
256
256
–
1
–
1
Effective full buffer program per
word with VPPH
–
1
3.125
Program suspend latency
Blank check
–
–
–
–
–
–
–
–
–
–
–
20
3.2
–
25
–
µs
ms
PROGRAM/ERASE cycles (per block)
100,000
–
cycles
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
Notes:
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m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN
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