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JR28F032M29EWXX 参数 Datasheet PDF下载

JR28F032M29EWXX图片预览
型号: JR28F032M29EWXX
PDF下载: 下载PDF文件 查看货源
内容描述: [Parallel NOR Flash Embedded Memory]
分类和应用:
文件页数/大小: 87 页 / 1118 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash  
DC Characteristics  
Table 35: DC Voltage Characteristics  
Parameter  
Input LOW voltage  
Symbol  
VIL  
Conditions  
VCC 2.7V  
VCC 2.7V  
IOL = 100µA,  
Min  
–0.5  
Typ  
Max  
0.8  
Unit  
V
Notes  
Input HIGH voltage  
Output LOW voltage  
VIH  
VCCQ–0.4  
VCCQ+0.5  
0.2  
V
1
VOL  
V
VCC = VCC,min  
,
VCCQ = VCCQ,min  
Output HIGH voltage  
VOH  
IOH = 100µA,  
VCCQ - 0.2  
11.5  
V
V
VCC = VCC,min  
VCCQ = VCCQ,min  
,
Voltage for VPP/WP# program  
acceleration  
VPPH  
12.5  
VPP logic level  
VPPL  
2.7  
2.3  
3.6  
V
V
Program/erase lockout supply  
voltage  
VLKO  
2
1. If VCCQ range is 2.7v~3.6v, VIH Min is 2v.  
2. Sampled only; not 100% tested.  
Notes:  
PDF: 09005aef84dc44a7  
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
69  
© 2012 Micron Technology, Inc. All rights reserved.  
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