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JR28F032M29EWXX 参数 Datasheet PDF下载

JR28F032M29EWXX图片预览
型号: JR28F032M29EWXX
PDF下载: 下载PDF文件 查看货源
内容描述: [Parallel NOR Flash Embedded Memory]
分类和应用:
文件页数/大小: 87 页 / 1118 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash  
Power-Up and Reset Characteristics  
Power-Up and Reset Characteristics  
Table 29: Power-Up Specifications  
Symbol  
Parameter  
Legacy  
JEDEC  
Min  
0
Unit  
µs  
Notes  
VCC HIGH to VCCQ HIGH  
tVCHVCQH  
tVCHPH  
tVCQHPH  
tPHEL  
1
2
2
VCC HIGH to rising edge of RST#  
VCCQ HIGH to rising edge of RST#  
RST# HIGH to chip enable LOW  
RST# HIGH to write enable LOW  
tVCS  
tVIOS  
tRH  
60  
0
µs  
µs  
50  
150  
ns  
tPHWL  
ns  
1. VCC and VCCQ ramps must be synchronized during power-up.  
Notes:  
2. If RST# is not stable for tVCS or tVIOS, the device will not allow any READ or WRITE oper-  
ations, and a hardware reset is required.  
Figure 14: Power-Up Timing  
tVCHVCQH  
VCC  
VCCQ  
tRH  
CE#  
tVIOS  
RST#  
tVCS  
WE#  
tPHWL  
PDF: 09005aef84dc44a7  
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
64  
© 2012 Micron Technology, Inc. All rights reserved.  
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