32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash
Common Flash Interface
Table 25: CFI Query System Interface Information
Note 1 applies to the entire table
Address
x16
x8
Data
Description
Value
1Bh
36h
0027h
VCC logic supply minimum program/erase voltage
Bits[7:4] BCD value in volts
2.7V
Bits[3:0] BCD value in 100mV
1Ch
1Dh
1Eh
38h
3Ah
3Ch
0036h
00B5h
00C5h
VCC logic supply maximum program/erase voltage
Bits[7:4] BCD value in volts
Bits[3:0] BCD value in 100mV
3.6V
11.5V
12.5V
VPPH (programming) supply minimum program/erase voltage
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 100mV
VPPH (programming) supply maximum program/erase voltage
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 100mV
1Fh
20h
21h
22h
3Eh
40h
42h
44h
0004h
0009h
0009h
000Fh
0010h
0011h
0004h
0002h
0003h
0002h
0002h
0002h
Typical timeout for single byte/word program = 2nμs
Typical timeout for maximum size buffer program = 2nμs
Typical timeout per individual block erase = 2nms
Typical timeout for full chip erase = 2nms
16µs
512µs
0.5s
32Mb: 33s
64Mb: 66s
128Mb: 131s
256µs
23h
24h
25h
26h
46h
48h
4Ah
4Ch
Maximum timeout for byte/word program = 2n times typical
Maximum timeout for buffer program = 2n times typical
Maximum timeout per individual block erase = 2n times typical
Maximum timeout for chip erase = 2n times typical
2048µs
4s
32Mb: 131s
64Mb: 262s
128Mb: 524s
1. The values in this table are valid for all packages.
Note:
Table 26: Device Geometry Definition
Address
x16
x8
Data
0016h
0017h
0018h
Description
Device size = 2n in number of bytes
Value
4MB
27h
4Eh
8MB
16MB
28h
29h
50h
52h
0002h
0000h
Flash device interface code description
x8, x16 asynchro-
nous
2Ah
2Bh
54h
56h
0008h1 Maximum number of bytes in multi-byte program or page = 2n
0000h
256
PDF: 09005aef84dc44a7
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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