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JR28F032M29EWXX 参数 Datasheet PDF下载

JR28F032M29EWXX图片预览
型号: JR28F032M29EWXX
PDF下载: 下载PDF文件 查看货源
内容描述: [Parallel NOR Flash Embedded Memory]
分类和应用:
文件页数/大小: 87 页 / 1118 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash  
Protection Operations  
dressed using the addresses occupied by block 0 in the other operating modes (see the  
Memory Map table).  
In extended memory block mode, ERASE, CHIP ERASE, ERASE SUSPEND, and ERASE  
RESUME commands are not allowed. The extended memory block cannot be erased,  
and each bit of the extended memory block can only be programmed once.  
The extended memory block is protected from further modification by programming  
lock register bit 0. Once invoked, this protection cannot be undone.  
The device remains in extended memory block mode until the EXIT EXTENDED MEM-  
ORY BLOCK (90/00h) command is issued, which returns the device to read mode, or  
until power is removed from the device. After a power-up sequence or hardware reset,  
the device will revert to reading memory blocks in the main array.  
EXIT PROTECTION Command  
The EXIT PROTECTION COMMAND SET (90/00h) command is used to exit the lock  
register, password protection, nonvolatile protection, volatile protection, and nonvola-  
tile protection bit lock bit command set modes and return the device to read mode.  
PDF: 09005aef84dc44a7  
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2012 Micron Technology, Inc. All rights reserved.  
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