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JR28F032M29EWXX 参数 Datasheet PDF下载

JR28F032M29EWXX图片预览
型号: JR28F032M29EWXX
PDF下载: 下载PDF文件 查看货源
内容描述: [Parallel NOR Flash Embedded Memory]
分类和应用:
文件页数/大小: 87 页 / 1118 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash  
Program Operations  
If an address is written several times during a WRITE TO BUFFER PROGRAM operation,  
the address/data counter will be decremented at each data load operation, and the data  
will be programmed to the last word loaded into the buffer.  
Invalid address combinations or the incorrect sequence of bus WRITE cycles will abort  
the WRITE TO BUFFER PROGRAM command.  
The status register bits DQ1, DQ5, DQ6, DQ7 can be used to monitor the device status  
during a WRITE TO BUFFER PROGRAM operation.  
The WRITE TO BUFFER PROGRAM command should not be used to change a bit set to  
0 back to 1, and an attempt to do so is masked during the operation. Rather than the  
WRITE TO BUFFER PROGRAM command, the ERASE command should be used to set  
memory bits from 0 to 1.  
Figure 10: Boundary Condition of Program Buffer Size  
0000h  
255 words  
or less are  
allowed  
in the  
program  
buffer  
256-word  
program  
buffer is  
allowed  
256 Words  
Any  
buffer  
program  
attempt  
is not  
0100h  
allowed  
256-word  
program  
256 Words  
buffer is  
allowed  
0200h  
PDF: 09005aef84dc44a7  
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
39  
© 2012 Micron Technology, Inc. All rights reserved.  
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