TCN75
1.0
ELECTRICAL
CHARACTERISTICS
*Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings*
Supply Voltage (V
DD
) ............................................ 6.0V
ESD Susceptibility
(Note 3)
............................... 1000V
Voltage on Pins:
A0, A1, A2 .......... (GND – 0.3V) to (V
DD
+ 0.3V)
Voltage on Pins:
SDA, SCL, INT/CMPTR .. (GND – 0.3V) to 5.5V
Thermal Resistance (Junction to Ambient)
8-Pin SOIC.......................................... 170°C/W
8-Pin MSOP ....................................... 250°C//W
Operating Temperature Range (T
J
): -55°C to +125°C
Storage Temperature Range (T
STG
): -65°C to +150°C
TCN75 ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
V
DD
= 2.7V – 5.5V, -55°C
≤
(T
A
= T
J
)
≤
125°C, unless otherwise noted.
Symbol
Power Supply
V
DD
I
DD
I
DD1
Power Supply Voltage
Operating Current
Standby Supply Current
2.7
—
—
—
—
0.250
—
1
5.5
—
1.0
—
—
mA
μA
Serial Port Inactive (T
A
= T
J
= 25°C)
Serial Port Active
Shutdown Mode, Serial Port
Inactive (T
A
= T
J
= 25°C)
Parameter
Min
Typ
Max
Units
Test Conditions
INT/CMPTR Output
I
OL
t
TRIP
V
OL
ΔT
Sink Current: INT/CMPTR,
SDA Outputs
INT/CMPTR Response Time
Output Low Voltage
—
1
—
1
—
—
4
6
0.8
mA
Note 1
t
CONV
User Programmable
V
I
OL
= 4.0 mA
-55°C
≤
T
A
≤
+125°C
V
DD
= 3.3V: TCN75-3.3 MOA,
TCN75-3.3 MUA
V
DD
= 5.0V: TCN75-5.0 MOA,
TCN75-5.0 MUA
Temp-to-Bits Converter
Temperature Accuracy
(Note 2)
—
±3
—
°C
—
t
CONV
T
SET(PU)
T
HYST(PU)
Conversion Time
TEMP Default Value
T
HYST
Default Value
—
—
—
±0.5
55
80
75
±3
—
—
—
°C
msec
°C
°C
25°C
≤
T
A
≤
100°C
Power-up
Power-up
2-Wire Serial Bus Interface
V
IH
V
IL
V
OL
C
IN
I
LEAK
I
OL(SDA)
Logic Input High
Logic Input Low
Logic Output Low
Input Capacitance SDA, SCL
I/O Leakage
SDA Output Low Current
V
DD
x 0.7
—
—
—
—
—
—
—
—
15
±100
—
—
V
DD
x 0.3
0.4
—
—
6
V
V
V
pF
pA
mA
(T
A
= T
J
= 25°C)
I
OL
= 3 mA
©
2006 Microchip Technology Inc.
DS21490C-page 3
MICROCHIP [ MICROCHIP TECHNOLOGY ]
