TC9400/9401/9402
1.0
ELECTRICAL
CHARACTERISTICS
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings*
V
DD
– V
SS
........................................................... +18V
I
IN
........................................................................ 10mA
V
OUT
MAX
– V
OUT
Common...................................... 23V
V
REF
– V
SS
..........................................................-1.5V
Storage Temperature Range .............. -65°C to +150°C
Operating Temperature Range:
C Device ........................................... 0°C to +70°C
E Device......................................... -40°C to +85°C
Package Dissipation (T
A
≤
70°C):
8-Pin CerDIP .............................................. 800mW
8-Pin Plastic DIP ........................................ 730mW
8-Pin SOIC ................................................. 470mW
TC940X ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
V
DD
= +5V, V
SS
= -5V, V
GND
= 0V, V
REF
= -5V, R
BIAS
= 100kΩ, Full Scale = 10kHz, unless otherwise
specified. T
A
= +25°C, unless temperature range is specified (-40°C to +85°C for E device, 0°C to +70°C for C device).
Parameter
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Units
Test Conditions
Voltage-to-Frequency
Accuracy
Linearity 10kHz
—
TC9400
0.01
0.05
—
TC9401
0.004
0.01
—
TC9402
0.05
0.25
%
Output Deviation from
Full Scale Straight Line Between
Normalized Zero and
Full Scale Input
%
Output Deviation from
Full Scale Straight Line Between
Normalized Zero Read-
ing and Full Scale Input
ppm/°C Variation in Gain A due
Full Scale to Temperature Change
% of
Nominal
mV
Variation from Ideal
Accuracy
Correction at Zero
Adjust for Zero Output
when Input is Zero
Variation in Zero Offset
Due to Temperature
Change
Linearity 100kHz
—
0.1
0.25
—
0.04
0.08
—
0.25
0.5
Gain Temperature
Drift
(Note 1)
Gain Variance
Zero Offset
(Note 2)
Zero Temperature
Drift
(Note 1)
Note 1:
2:
3:
4:
5:
6:
7:
8:
9:
10:
—
—
—
±25
±10
±10
±40
—
±50
—
—
—
±25
±10
±10
±40
—
±50
—
—
—
±50
±10
±20
±100
—
±100
—
±25
±50
—
±25
±50
—
±50
±100
µV/°C
Full temperature range; not tested.
I
IN
= 0.
Full temperature range, I
OUT
= 10mA.
I
OUT
= 10µA.
Threshold Detect = 5V, Amp Out = 0V, full temperature range.
10Hz to 100kHz; not tested.
5µsec minimum positive pulse width and 0.5µsec minimum negative pulse width.
t
R
= t
F
= 20nsec.
R
L
≥
2kΩ, tested @ 10kΩ.
Full temperature range, V
IN
= -0.1V.
2002 Microchip Technology Inc.
DS21483B-page 3
©
MICROCHIP [ MICROCHIP TECHNOLOGY ]
