TC682
1.0
ELECTRICAL
CHARACTERISTICS
*Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings*
V
IN
.......................................................................+5.8V
V
IN
dV/dT ........................................................ 1V/μsec
V
OUT
...................................................................-11.6V
Short-Circuit Duration - V
OUT
..................... Continuous
Power Dissipation (T
A
≤
70°C)
8-Pin PDIP ..............................................730 mW
8-Pin SOIC ..............................................470 mW
Operating Temperature Range.............-40°C to +85°C
Storage Temperature (Unbiased) .......-65°C to +150°C
TC682 ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Over operating temperature range, V
IN
= +5V, test circuit Figure 3-1 unless otherwise noted.
Symbol
V
IN
I
IN
R
OUT
Parameter
Supply Voltage Range
Supply Current
V
OUT
Source Resistance
Min
2.4
—
—
—
—
—
90
99
Typ
—
185
—
140
—
170
12
92
99.9
Max
5.5
300
400
180
230
320
—
—
—
Units
V
μA
Ω
Test Conditions
R
L
= 2 kΩ
R
L
=
∞,
T
A
= 25°C
R
L
=
∞
I
L–
= 10 mA, T
A
= 25°C
I
L–
= 10 mA
I
L–
= 5 mA, V
IN
= 2.8V
R
L
= 2 kΩ, T
A
= 25°C
V
OUT
, R
L
=
∞
F
OSC
P
EFF
V
OUTEFF
Oscillator Frequency
Power Efficiency
Voltage Conversion Efficiency
kHz
%
%
DS21453C-page 2
©
2006 Microchip Technology Inc.
MICROCHIP [ MICROCHIP TECHNOLOGY ]
