TC4426A/TC4427A/TC4428A
1.0
ELECTRICAL
CHARACTERISTICS
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings*
Supply Voltage..................................................... +22V
Input Voltage, IN A or IN B
..................................(V
DD
+ 0.3V) to (GND – 5V)
Package Power Dissipation (T
A
≤
70°C)
PDIP ........................................................ 730mW
CERDIP ................................................... 800mW
SOIC........................................................ 470mW
Package Thermal Resistance
CERDIP R
θ
J-A
........................................ 150°C/W
CERDIP R
θ
J-C
......................................... 50°C/W
PDIP R
θ
J-A
............................................. 125°C/W
PDIP R
θ
J-C
............................................... 42°C/W
SOIC R
θ
J-A
............................................ 155°C/W
SOIC R
θ
J-C
.............................................. 45°C/W
Operating Temperature Range
C Version .........................................0°C to +70°C
E Version ..................................... -40°C to +85°C
M Version................................... -55°C to +125°C
Storage Temperature Range ............. -65°C to +150°C
TC4426A/TC4427A/TC4428A ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Over operating temperature range with 4.5V
≤
V
DD
≤
18V, unless otherwise noted.
Symbol
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
High Output Voltage
Low Output Voltage
Output Resistance
V
DD
– 0.025
—
—
—
—
—
0.5
—
—
7
7
8
1.5
—
—
0.025
9
10
11
—
—
V
V
Ω
Parameter
Min
Typ
Max
Units
Test Conditions
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
2.4
—
-1
-10
—
—
—
—
—
0.8
1
10
V
V
µ
A
0V
≤
V
IN
≤
V
DD
DC Test
DC Test
I
OUT
= 10mA, V
DD
= 18V, T
A
= +25°C
0°C
≤
T
A
≤
+70°C
-40°C
≤
T
A
≤
+85°C
V
DD
= 18V
Duty cycle
≤
2%, t
≤
300
µ
sec
V
DD
= 18V
I
PK
I
REV
Note
1:
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Switching times ensured by design.
A
A
2002 Microchip Technology Inc.
DS21423B-page 3
MICROCHIP [ MICROCHIP TECHNOLOGY ]
