1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B . (V
DD
+ 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP R
θJ-A
................................................ 150°C/W
CerDIP R
θJ-C
.................................................. 50°C/W
PDIP R
θJ-A
................................................... 125°C/W
PDIP R
θJ-C
..................................................... 42°C/W
SOIC R
θJ-A
................................................... 155°C/W
SOIC R
θJ-C
..................................................... 45°C/W
PIN CONFIGURATIONS
NC 1
IN A 2
GND 3
IN B 4
8 NC
7 OUT A
NC 1
IN A 2
GND 3
IN B 4
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (T
A
≤
70°C)
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
8 NC
7 OUT A
NC 1
IN A 2
GND 3
IN B 4
2
7
8 NC
7 OUT A
TC4426
6 V
DD
5 OUT B
TC4427
6 VDD
5 OUT B
TC4428
6 VDD
5 OUT B
2,4
7,5
2,4
7,5
4
5
INVERTING
NC = NO INTERNAL CONNECTION
NOTE:
SOIC pinout is identical to DIP.
NONINVERTING
DIFFERENTIAL
ELECTRICAL CHARACTERISTICS:
T
A
= +25°C with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
Symbol
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
I
PK
I
REV
Parameter
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Test Conditions
Min
2.4
—
–1
V
DD
– 0.025
—
—
—
> 0.5
Typ
—
—
—
—
—
7
1.5
—
Max
—
0.8
1
—
0.025
10
—
—
Unit
V
V
µA
V
V
Ω
A
A
0V
≤
V
IN
≤
V
DD
V
DD
= 18V, I
O
= 10mA
Duty Cycle
≤
2%, t
≤
30µsec
Duty Cycle
≤
2%
t
≤
30
µsec
Figure 1
Figure 1
Figure 1
Figure 1
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
2
Switching Time
(Note 1)
t
R
Rise Time
t
F
Fall Time
t
D1
Delay Time
t
D2
Delay Time
Power Supply
I
S
Power Supply Current
—
—
—
—
—
—
19
19
20
40
—
—
30
30
30
50
4.5
0.4
nsec
nsec
nsec
nsec
mA
mA
NOTE:
1. Switching times are guaranteed by design.
TC4426/7/8-8
10/21/96
© 2001 Microchip Technology Inc.
DS21422A
MICROCHIP [ MICROCHIP TECHNOLOGY ]
