TC426/TC427/TC428
1.0
ELECTRICAL
CHARACTERISTICS
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings*
Supply Voltage..................................................... +20V
Input Voltage, Any Terminal
................................... V
DD
+ 0.3V to GND – 0.3V
Power Dissipation (T
A
≤
70°C)
PDIP ........................................................ 730mW
CERDIP ................................................... 800mW
SOIC........................................................ 470mW
Derating Factor
PDIP ....................................................... 8mW/°C
CERDIP ............................................... 6.4mW/°C
SOIC....................................................... 4mW/°C
Operating Temperature Range
C Version .........................................0°C to +70°C
I Version....................................... -25°C to +85°C
E Version ..................................... -40°C to +85°C
M Version................................... -55°C to +125°C
Storage Temperature Range ............. -65°C to +150°C
TC426/TC427/TC428 ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
T
A
= +25°C with 4.5V
≤
V
DD
≤
18V, unless otherwise noted.
Symbol
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
OH
R
OL
I
PK
t
R
t
F
t
D1
t
D2
I
S
Note
1:
Parameter
Min
Typ
Max
Units
Test Conditions
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
High Output Resistance
Low Output Resistance
Peak Output Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
Switching times ensured by design.
2.4
—
-1
V
DD
– 0.025
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
6
1.5
—
—
—
—
—
—
—
0.8
1
—
0.025
15
10
—
30
30
50
75
8
0.4
V
V
µ
A
0V
≤
V
IN
≤
V
DD
V
V
Ω
Ω
I
OUT
= 10mA, V
DD
= 18V
I
OUT
= 10mA, V
DD
= 18V
A
nsec
nsec
nsec
nsec
mA
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
Switching Time
(Note 1)
Power Supply
2002 Microchip Technology Inc.
DS21415B-page 3
MICROCHIP [ MICROCHIP TECHNOLOGY ]
