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TC1185-3.3VCT713 参数 Datasheet PDF下载

TC1185-3.3VCT713图片预览
型号: TC1185-3.3VCT713
PDF下载: 下载PDF文件 查看货源
内容描述: 50毫安100 mA和150毫安CMOS LDO,具有关断和参考旁路 [50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass]
分类和应用: 线性稳压器IC调节器电源电路光电二极管输出元件
文件页数/大小: 22 页 / 690 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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TC1014/TC1015/TC1185
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Specifications:
V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 1.0 µF, SHDN > V
IH
, T
A
= +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Output Noise
Symbol
eN
Min
Typ
600
Max
Units
nV/√Hz
Device
Test Conditions
I
L
= I
OUT
MAX
,
F = 10 kHz
470 pF from Bypass
to GND
V
IN
= 2.5V to 6.5V
V
IN
= 2.5V to 6.5V
SHDN Input High Threshold
SHDN Input Low Threshold
Note
1:
2:
3:
4:
5:
6:
7:
8:
V
IH
V
IL
45
15
%V
IN
%V
IN
The minimum V
IN
has to meet two conditions: V
IN
2.7V and V
IN
V
R
+ V
DROPOUT
.
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
)x 10
6
V
OUT
x
ΔT
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see
Section 5.0 “Thermal Considerations”
for more details.
Apply for Junction Temperatures of -40°C to +85°C.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 1.0 µF, SHDN > V
IH
, T
A
= +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Temperature Ranges:
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23
θ
JA
256
°C/W
T
A
T
A
T
A
-40
-40
-65
+125
+125
+150
°C
°C
°C
Sym
Min
Typ
Max
Units
Conditions
©
2007 Microchip Technology Inc.
DS21335E-page 3