TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note:
Unless otherwise specified, all parts are measured at temperature = +25°C.
Measure Rise Time of 5.0V LDO With Bypass Capacitor
Conditions: C
IN
= 1μF, C
OUT
= 1μF, C
BYP
= 470pF, I
LOAD
= 100mA
V
IN
= 6V, Temp = 25°C, Rise Time = 390μS
Measure Rise Time of 5.0V LDO Without Bypass Capacitor
Conditions: C
IN
= 1μF, C
OUT
= 1μF, C
BYP
= 0pF, I
LOAD
= 100mA
V
IN
= 6V, Temp = 25°C, Rise Time = 192μS
V
SHDN
V
SHDN
V
OUT
V
OUT
FIGURE 2-21:
Measure Rise Time of 5.0V
with Bypass Capacitor.
Measure Fall Time of 5.0V LDO With Bypass Capacitor
Conditions: C
IN
= 1μF, C
OUT
= 1μF, C
BYP
= 470pF, I
LOAD
= 50mA
V
IN
= 6V, Temp = 25°C, Fall Time = 167μS
FIGURE 2-23:
Measure Rise Time of 5.0V
without Bypass Capacitor.
Measure Fall Time of 5.0V LDO Without Bypass Capacitor
Conditions: C
IN
= 1μF, C
OUT
= 1μF, C
BYP
= 0pF, I
LOAD
= 100mA
V
IN
= 6V, Temp = 25°C, Fall Time = 88μS
V
SHDN
V
SHDN
V
OUT
V
OUT
FIGURE 2-22:
Measure Fall Time of 5.0V
with Bypass Capacitor.
FIGURE 2-24:
Measure Fall Time of 5.0V
without Bypass Capacitor.
DS21335E-page 8
©
2007 Microchip Technology Inc.
MICROCHIP [ MICROCHIP TECHNOLOGY ]
