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PIC18F4580-I/PT 参数 Datasheet PDF下载

PIC18F4580-I/PT图片预览
型号: PIC18F4580-I/PT
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚增强型闪存微控制器与ECAN技术, 10位A / D和纳瓦技术 [28/40/44-Pin Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路时钟
文件页数/大小: 490 页 / 8912 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F2480/2580/4480/4580  
8.6  
Operation During Code-Protect  
8.8  
Using the Data EEPROM  
Data EEPROM memory has its own code-protect bits in  
Configuration Words. External read and write  
operations are disabled if code protection is enabled.  
The data EEPROM is a high-endurance, byte address-  
able array that has been optimized for the storage of  
frequently changing information (e.g., program  
variables or other data that are updated often).  
Frequently changing values will typically be updated  
more often than specification D124. If this is not the  
case, an array refresh must be performed. For this  
reason, variables that change infrequently (such as  
constants, IDs, calibration, etc.) should be stored in  
Flash program memory.  
The microcontroller itself can both read and write to the  
internal data EEPROM, regardless of the state of the  
code-protect Configuration bit. Refer to Section 25.0  
“Special Features of the CPU” for additional  
information.  
8.7  
Protection Against Spurious Write  
A simple data EEPROM refresh routine is shown in  
Example 8-3.  
There are conditions when the device may not want to  
write to the data EEPROM memory. To protect against  
spurious EEPROM writes, various mechanisms have  
been implemented. On power-up, the WREN bit is  
cleared. In addition, writes to the EEPROM are blocked  
during the Power-up Timer period (TPWRT,  
parameter 33).  
Note:  
If data EEPROM is only used to store  
constants and/or data that changes rarely,  
an array refresh is likely not required. See  
specification D124.  
The write initiate sequence and the WREN bit together  
help prevent an accidental write during brown-out,  
power glitch or software malfunction.  
EXAMPLE 8-3:  
DATA EEPROM REFRESH ROUTINE  
CLRF  
BCF  
BCF  
BCF  
BSF  
EEADR  
; Start at address 0  
; Set for memory  
; Set for Data EEPROM  
; Disable interrupts  
; Enable writes  
; Loop to refresh array  
; Read current address  
;
; Write 55h  
;
; Write 0AAh  
; Set WR bit to begin write  
; Wait for write to complete  
EECON1, CFGS  
EECON1, EEPGD  
INTCON, GIE  
EECON1, WREN  
LOOP  
BSF  
EECON1, RD  
55h  
EECON2  
0AAh  
EECON2  
EECON1, WR  
EECON1, WR  
$-2  
MOVLW  
MOVWF  
MOVLW  
MOVWF  
BSF  
BTFSC  
BRA  
INCFSZ  
BRA  
EEADR, F  
LOOP  
; Increment address  
; Not zero, do it again  
BCF  
BSF  
EECON1, WREN  
INTCON, GIE  
; Disable writes  
; Enable interrupts  
DS39637D-page 114  
© 2009 Microchip Technology Inc.  
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