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PIC18F2420-I/SO 参数 Datasheet PDF下载

PIC18F2420-I/SO图片预览
型号: PIC18F2420-I/SO
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚增强型闪存微控制器与10位A / D和纳瓦技术 [28/40/44-Pin Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology]
分类和应用: 闪存微控制器
文件页数/大小: 412 页 / 6898 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F2420/2520/4420/4520  
26.2 DC Characteristics: Power-Down and Supply Current  
PIC18F2420/2520/4420/4520 (Industrial)  
PIC18LF2420/2520/4420/4520 (Industrial)  
PIC18LF2420/2520/4420/4520  
Standard Operating Conditions (unless otherwise stated)  
(Industrial)  
Operating temperature  
-40°C TA +85°C for industrial  
Standard Operating Conditions (unless otherwise stated)  
PIC18F2420/2520/4420/4520  
Operating temperature  
-40°C TA +85°C for industrial  
-40°C TA +125°C for extended  
(Industrial, Extended)  
Param  
Device  
No.  
Typ  
Max Units  
Conditions  
(1)  
Power-Down Current (IPD)  
PIC18LF2X2X/4X20 0.1  
0.5  
0.5  
2.5  
0.7  
0.7  
3.5  
1.0  
1.0  
10  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
-40°C  
+25°C  
+85°C  
-40°C  
VDD = 2.0V  
(Sleep mode)  
0.1  
0.2  
PIC18LF2X2X/4X20 0.1  
VDD = 3.0V  
(Sleep mode)  
0.1  
+25°C  
+85°C  
-40°C  
0.3  
All devices 0.1  
0.2  
0.7  
+25°C  
+85°C  
+125°C  
VDD = 5.0V  
(Sleep mode)  
Extended devices only 10  
100  
Legend: Shading of rows is to assist in readability of the table.  
Note 1: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured  
with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD or VSS and all features that  
add delta current disabled (such as WDT, Timer1 Oscillator, BOR, etc.).  
2: The supply current is mainly a function of operating voltage, frequency and mode. Other factors, such as I/O pin  
loading and switching rate, oscillator type and circuit, internal code execution pattern and temperature, also have  
an impact on the current consumption.  
The test conditions for all IDD measurements in active operation mode are:  
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD or VSS;  
MCLR = VDD; WDT enabled/disabled as specified.  
3: When operation below -10°C is expected, use T1OSC High-Power mode, where LPT1OSC (CONFIG3H<2>) = 0.  
When operation will always be above -10°C, then the low-power Timer1 oscillator may be selected.  
4: BOR and HLVD enable internal band gap reference. With both modules enabled, current consumption will be less  
than the sum of both specifications.  
© 2008 Microchip Technology Inc.  
DS39631E-page 325