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PIC18F8620-I/PT 参数 Datasheet PDF下载

PIC18F8620-I/PT图片预览
型号: PIC18F8620-I/PT
PDF下载: 下载PDF文件 查看货源
内容描述: 八十〇分之六十四引脚高性能1 Mbit的增强型闪存微控制器与A / D [64/80-Pin High Performance 1 Mbit Enhanced FLASH Microcontrollers with A/D]
分类和应用: 闪存微控制器和处理器外围集成电路PC时钟
文件页数/大小: 366 页 / 6797 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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PIC18FXX20
26.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
Ambient temperature under bias.............................................................................................................-55°C to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to V
SS
(except V
DD
, MCLR, and RA4) ......................................... -0.3V to (V
DD
+ 0.3V)
Voltage on V
DD
with respect to V
SS
......................................................................................................... -0.3V to +5.5V
Voltage on MCLR with respect to V
SS
(Note 2)
......................................................................................... 0V to +13.25V
Voltage on RA4 with respect to Vss ............................................................................................................. 0V to +12.0V
Total power dissipation
(Note 1)
...............................................................................................................................1.0W
Maximum current out of V
SS
pin ...........................................................................................................................300 mA
Maximum current into V
DD
pin ..............................................................................................................................250 mA
Input clamp current, I
IK
(V
I
< 0 or V
I
> V
DD
)......................................................................................................................
±20
mA
Output clamp current, I
OK
(V
O
< 0 or V
O
> V
DD
)
.............................................................................................................. ±20
mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by all ports .......................................................................................................................200 mA
Maximum current sourced by all ports ..................................................................................................................200 mA
Note 1:
Power dissipation is calculated as follows:
Pdis = V
DD
x {I
DD
-
I
OH
} +
{(V
DD
-V
OH
) x I
OH
} +
∑(V
O
l x I
OL
)
2:
Voltage spikes below V
SS
at the MCLR/V
PP
pin, inducing currents greater than 80 mA, may cause latchup.
Thus, a series resistor of 50-100Ω should be used when applying a “low” level to the MCLR/V
PP
pin, rather
than pulling this pin directly to V
SS
.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
2003 Microchip Technology Inc.
Advance Information
DS39609A-page 307