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PIC18F2431-I/SO 参数 Datasheet PDF下载

PIC18F2431-I/SO图片预览
型号: PIC18F2431-I/SO
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚增强型闪存微控制器采用纳瓦技术,高性能PWM和A / D [28/40/44-Pin Enhanced Flash Microcontrollers with nanoWatt Technology, High-Performance PWM and A/D]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管PC时钟
文件页数/大小: 392 页 / 3127 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F2331/2431/4331/4431  
7.2  
EECON1 and EECON2 Registers  
7.0  
DATA EEPROM MEMORY  
Access to the data EEPROM is controlled by two  
registers: EECON1 and EECON2. These are the same  
registers which control access to the program memory  
and are used in a similar manner for the data  
EEPROM.  
The data EEPROM is readable and writable during  
normal operation over the entire VDD range. The data  
memory is not directly mapped in the register file  
space. Instead, it is indirectly addressed through the  
Special Function Registers (SFR).  
The EECON1 register (Register 7-1) is the control  
register for data and program memory access. Control  
bit, EEPGD, determines if the access will be to program  
or data EEPROM memory. When clear, operations will  
access the data EEPROM memory. When set, program  
memory is accessed.  
There are four SFRs used to read and write the  
program and data EEPROM memory. These registers  
are:  
• EECON1  
• EECON2  
• EEDATA  
• EEADR  
Control bit, CFGS, determines if the access will be to  
the Configuration registers or to program memory/data  
EEPROM memory. When set, subsequent operations  
access Configuration registers. When CFGS is clear,  
the EEPGD bit selects either Flash program or data  
EEPROM memory.  
The EEPROM data memory allows byte read and write.  
When interfacing to the data memory block, EEDATA  
holds the 8-bit data for read/write and EEADR holds the  
address of the EEPROM location being accessed.  
These devices have 256 bytes of data EEPROM with  
an address range from 00h to FFh.  
The WREN bit, when set, will allow a write operation.  
On power-up, the WREN bit is clear. The WRERR bit is  
set in hardware when the WREN bit is set and cleared  
when the internal programming timer expires and the  
write operation is complete.  
The EEPROM data memory is rated for high erase/  
write cycle endurance. A byte write automatically  
erases the location and writes the new data (erase-  
before-write). The write time is controlled by an on-chip  
timer. The write time will vary with voltage and  
temperature, as well as from chip-to-chip. Please  
refer to Parameter D122 (Table 26-1 in Section 26.0  
“Electrical Characteristics”) for exact limits.  
Note:  
During normal operation, the WRERR bit  
is read as ‘1’. This can indicate that a write  
operation was prematurely terminated by  
a
Reset or  
a write operation was  
attempted improperly.  
The WR control bit initiates write operations. The bit  
cannot be cleared, only set, in software; it is cleared in  
hardware at the completion of the write operation.  
7.1  
EEADR  
The Address register can address 256 bytes of data  
EEPROM.  
Note:  
The EEIF interrupt flag bit (PIR2<4>) is  
set when the write is complete. It must be  
cleared in software.  
Control bits, RD and WR, start read and erase/write  
operations, respectively. These bits are set by firmware  
and cleared by hardware at the completion of the  
operation.  
The RD bit cannot be set when accessing program  
memory (EEPGD = 1). Program memory is read using  
table read instructions. See Section 7.3 “Reading the  
Data EEPROM Memory” regarding table reads.  
The EECON2 register is not a physical register. It is  
used exclusively in the memory write and erase  
sequences. Reading EECON2 will read all ‘0’s.  
2010 Microchip Technology Inc.  
DS39616D-page 79  
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