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PIC18F4431-I/PT 参数 Datasheet PDF下载

PIC18F4431-I/PT图片预览
型号: PIC18F4431-I/PT
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚增强型闪存微控制器采用纳瓦技术,高性能PWM和A / D [28/40/44-Pin Enhanced Flash Microcontrollers with nanoWatt Technology, High-Performance PWM and A/D]
分类和应用: 闪存微控制器
文件页数/大小: 392 页 / 3127 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F2331/2431/4331/4431  
26.0 ELECTRICAL CHARACTERISTICS  
(†)  
Absolute Maximum Ratings  
Ambient temperature under bias.............................................................................................................-55°C to +125°C  
Storage temperature .............................................................................................................................. -65°C to +150°C  
Voltage on any pin with respect to VSS (except VDD, MCLR, and RA4) ......................................... -0.3V to (VDD + 0.3V)  
Voltage on VDD with respect to VSS ......................................................................................................... -0.3V to +7.5V  
Voltage on MCLR with respect to VSS (Note 2) ......................................................................................... 0V to +13.25V  
Voltage on RA4 with respect to Vss............................................................................................................... 0V to +8.5V  
Total power dissipation (Note 1) ...............................................................................................................................1.0W  
Maximum current out of VSS pin ...........................................................................................................................300 mA  
Maximum current into VDD pin ..............................................................................................................................250 mA  
Input clamp current, IIK (VI < 0 or VI > VDD)20 mA  
Output clamp current, IOK (VO < 0 or VO > VDD) 20 mA  
Maximum output current sunk by any I/O pin..........................................................................................................25 mA  
Maximum output current sourced by any I/O pin ....................................................................................................25 mA  
Maximum current sunk byall ports .......................................................................................................................200 mA  
Maximum current sourced by all ports ..................................................................................................................200 mA  
Note 1: Power dissipation is calculated as follows:  
Pdis = VDD x {IDD IOH} + {(VDD – VOH) x IOH} + (VOL x IOL)  
2: Voltage spikes below VSS at the MCLR/VPP pin, inducing currents greater than 80 mA, may cause latch-up.  
Thus, a series resistor of 50-100should be used when applying a “low” level to the MCLR/VPP pin, rather  
than pulling this pin directly to VSS.  
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the  
device. This is a stress rating only and functional operation of the device at those or any other conditions above those  
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for  
extended periods may affect device reliability.  
2010 Microchip Technology Inc.  
DS39616D-page 329