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PIC18LF6620-I/PT 参数 Datasheet PDF下载

PIC18LF6620-I/PT图片预览
型号: PIC18LF6620-I/PT
PDF下载: 下载PDF文件 查看货源
内容描述: 八十〇分之六十四引脚高性能1 Mbit的增强型闪存微控制器与A / D [64/80-Pin High Performance 1 Mbit Enhanced FLASH Microcontrollers with A/D]
分类和应用: 闪存微控制器和处理器外围集成电路PC时钟
文件页数/大小: 366 页 / 6797 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18FXX20  
12.2.1  
LOW POWER TIMER1 OPTION  
(PIC18FX520 DEVICES ONLY)  
12.2 Timer1 Oscillator  
A crystal oscillator circuit is built-in between pins T1OSI  
(input) and T1OSO (amplifier output). It is enabled by  
setting control bit, T1OSCEN (T1CON<3>). The oscil-  
lator is a low power oscillator rated up to 200 kHz. It will  
continue to run during SLEEP. It is primarily intended  
for a 32 kHz crystal. The circuit for a typical LP oscilla-  
tor is shown in Figure 12-3. Table 12-1 shows the  
capacitor selection for the Timer1 oscillator.  
The Timer1 oscillator for PIC18FX520 devices incorpo-  
rates an additional low power feature. When this option  
is selected, it allows the oscillator to automatically  
reduce its power consumption when the microcontroller  
is in SLEEP mode. During normal device operation, the  
oscillator draws full current. As high noise environ-  
ments may cause excessive oscillator instability in  
SLEEP mode, this option is best suited for low noise  
applications where power conservation is an important  
design consideration.  
The user must provide a software time delay to ensure  
proper start-up of the Timer1 oscillator  
The low power option is enabled by clearing the  
T1OSCMX bit (CONFIG3H<1>). By default, the option  
is disabled, which results in a more-or-less constant  
current draw for the Timer1 oscillator.  
Due to the low power nature of the oscillator, it may also  
be sensitive to rapidly changing signals in close  
proximity.  
FIGURE 12-3:  
EXTERNAL  
COMPONENTS FOR THE  
TIMER1 LP OSCILLATOR  
C1  
PIC18FXX20  
T1OSI  
33 pF  
XTAL  
32.768 kHz  
The oscillator circuit, shown in Figure 12-3, should be  
located as close as possible to the microcontroller.  
There should be no circuits passing within the oscillator  
circuit boundaries other than VSS or VDD.  
T1OSO  
C2  
If a high speed circuit must be located near the oscilla-  
tor (such as the CCP1 pin in output compare or PWM  
mode, or the primary oscillator using the OSC2 pin), a  
grounded guard ring around the oscillator circuit, as  
shown in Figure 12-4, may be helpful when used on a  
single sided PCB, or in addition to a ground plane.  
33 pF  
Note:  
See the Notes with Table 12-1 for additional  
information about capacitor selection.  
TABLE 12-1: CAPACITOR SELECTION FOR  
THE ALTERNATE  
FIGURE 12-4:  
OSCILLATOR CIRCUIT  
WITH GROUNDED  
GUARD RING  
OSCILLATOR  
Osc Type  
Freq  
C1  
TBD(1)  
C2  
TBD(1)  
LP  
32 kHz  
VDD  
Crystal to be Tested:  
VSS  
32.768 kHz Epson C-001R32.768K-A ± 20 PPM  
OSC1  
OSC2  
Note 1: Microchip suggests 33 pF as a starting  
point in validating the oscillator circuit.  
2: Higher capacitance increases the stability  
of the oscillator, but also increases the  
start-up time.  
RC0  
RC1  
3: Since each resonator/crystal has its own  
characteristics, the user should consult  
the resonator/crystal manufacturer for  
RC2  
appropriate  
components.  
values  
of  
external  
Note: Not drawn to scale.  
4: Capacitor values are for design guidance  
only.  
2003 Microchip Technology Inc.  
Advance Information  
DS39609A-page 137  
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