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PIC18LF4320-I/ML 参数 Datasheet PDF下载

PIC18LF4320-I/ML图片预览
型号: PIC18LF4320-I/ML
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚高性能,增强型闪存微控制器与10位A / D和纳瓦技术 [28/40/44-Pin High-Performance, Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路时钟
文件页数/大小: 388 页 / 6899 K
品牌: MICROCHIP [ MICROCHIP ]
 浏览型号PIC18LF4320-I/ML的Datasheet PDF文件第77页浏览型号PIC18LF4320-I/ML的Datasheet PDF文件第78页浏览型号PIC18LF4320-I/ML的Datasheet PDF文件第79页浏览型号PIC18LF4320-I/ML的Datasheet PDF文件第80页浏览型号PIC18LF4320-I/ML的Datasheet PDF文件第82页浏览型号PIC18LF4320-I/ML的Datasheet PDF文件第83页浏览型号PIC18LF4320-I/ML的Datasheet PDF文件第84页浏览型号PIC18LF4320-I/ML的Datasheet PDF文件第85页  
PIC18F2220/2320/4220/4320  
EXAMPLE 6-3:  
WRITING TO FLASH PROGRAM MEMORY (CONTINUED)  
PROGRAM_MEMORY  
BCF  
INTCON,GIE  
55h  
EECON2  
AAh  
EECON2  
EECON1,WR  
; disable interrupts  
; required sequence  
; write 55H  
MOVLW  
MOVWF  
MOVLW  
MOVWF  
BSF  
; write AAH  
; start program (CPU stall)  
NOP  
BSF  
INTCON,GIE  
; re-enable interrupts  
; loop until done  
DECFSZ COUNTER_HI  
GOTO  
BCF  
PROGRAM_LOOP  
EECON1,WREN  
; disable write to memory  
6.5.2  
WRITE VERIFY  
6.6  
Flash Program Operation During  
Code Protection  
Depending on the application, good programming  
practice may dictate that the value written to the mem-  
ory should be verified against the original value. This  
should be used in applications where excessive writes  
can stress bits near the specification limit.  
See Section 23.0 “Special Features of the CPU”  
(Section 23.5 “Program Verification and Code Pro-  
tection”) for details on code protection of Flash  
program memory.  
6.5.3  
UNEXPECTED TERMINATION OF  
WRITE OPERATION  
If a write is terminated by an unplanned event, such as  
loss of power or an unexpected Reset, the memory  
location just programmed should be verified and repro-  
grammed if needed. The WRERR bit is set when a  
write operation is interrupted by a MCLR Reset, or a  
WDT Time-out Reset, during normal operation. In  
these situations, users can check the WRERR bit and  
rewrite the location.  
TABLE 6-2:  
Name  
REGISTERS ASSOCIATED WITH PROGRAM FLASH MEMORY  
Value on  
Value on:  
POR, BOR  
Bit 7  
Bit 6  
Bit 5  
Bit 4  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
all other  
Resets  
TBLPTRU  
bit 21 Program Memory Table Pointer Upper Byte  
(TBLPTR<20:16>)  
--00 0000 --00 0000  
TBPLTRH Program Memory Table Pointer High Byte (TBLPTR<15:8>)  
TBLPTRL Program Memory Table Pointer High Byte (TBLPTR<7:0>)  
0000 0000 0000 0000  
0000 0000 0000 0000  
0000 0000 0000 0000  
0000 000x 0000 000u  
TABLAT  
INTCON  
EECON2  
EECON1  
IPR2  
Program Memory Table Latch  
GIE/GIEH PEIE/GIEL TMR0IE  
INTE  
RBIE  
TMR0IF  
INTF  
RBIF  
RD  
EEPROM Control Register 2 (not a physical register)  
EEPGD  
OSCFIP  
OSCFIF  
OSCFIE  
CFGS  
CMIP  
CMIF  
CMIE  
FREE  
EEIP  
EEIF  
EEIE  
WRERR WREN  
WR  
xx-0 x000 uu-0 u000  
BCLIP  
BCLIF  
BCLIE  
LVDIP  
LVDIF  
LVDIE  
TMR3IP  
TMR3IF  
TMR3IE  
CCP2IP 11-1 1111 ---1 1111  
CCP2IF 00-0 0000 ---0 0000  
CCP2IE 00-0 0000 ---0 0000  
PIR2  
PIE2  
Legend:  
x= unknown, u= unchanged, r = reserved, -= unimplemented, read as ‘0’.  
Shaded cells are not used during Flash/EEPROM access.  
2003 Microchip Technology Inc.  
DS39599C-page 79