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PIC18LF4320-I/ML 参数 Datasheet PDF下载

PIC18LF4320-I/ML图片预览
型号: PIC18LF4320-I/ML
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚高性能,增强型闪存微控制器与10位A / D和纳瓦技术 [28/40/44-Pin High-Performance, Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路时钟
文件页数/大小: 388 页 / 6899 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F2220/2320/4220/4320  
26.0 ELECTRICAL CHARACTERISTICS  
(†)  
Absolute Maximum Ratings  
Ambient temperature under bias.............................................................................................................-55°C to +125°C  
Storage temperature .............................................................................................................................. -65°C to +150°C  
Voltage on any pin with respect to VSS (except VDD, MCLR and RA4) .......................................... -0.3V to (VDD + 0.3V)  
Voltage on VDD with respect to VSS ......................................................................................................... -0.3V to +7.5V  
Voltage on MCLR with respect to VSS (Note 2) ......................................................................................... 0V to +13.25V  
Voltage on RA4 with respect to VSS............................................................................................................... 0V to +8.5V  
Total power dissipation (Note 1) ...............................................................................................................................1.0W  
Maximum current out of VSS pin ...........................................................................................................................300 mA  
Maximum current into VDD pin ..............................................................................................................................250 mA  
Input clamp current, IIK (VI < 0 or VI > VDD)...................................................................................................................... 20 mA  
Output clamp current, IOK (VO < 0 or VO > VDD).............................................................................................................. 20 mA  
Maximum output current sunk by any I/O pin..........................................................................................................25 mA  
Maximum output current sourced by any I/O pin ....................................................................................................25 mA  
Maximum current sunk by all ports .......................................................................................................................200 mA  
Maximum current sourced by all ports ..................................................................................................................200 mA  
Note 1: Power dissipation is calculated as follows:  
Pdis = VDD x {IDD - IOH} + {(VDD-VOH) x IOH} + (VOl x IOL)  
2: Voltage spikes below VSS at the MCLR/VPP pin, inducing currents greater than 80 mA, may cause latch-up.  
Thus, a series resistor of 50-100should be used when applying a “low” level to the MCLR/VPP pin, rather  
than pulling this pin directly to VSS.  
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the  
device. This is a stress rating only and functional operation of the device at those or any other conditions above those  
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for  
extended periods may affect device reliability.  
2003 Microchip Technology Inc.  
DS39599C-page 305  
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