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PIC18F2320-I/SP 参数 Datasheet PDF下载

PIC18F2320-I/SP图片预览
型号: PIC18F2320-I/SP
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚高性能,增强型闪存微控制器与10位A / D和纳瓦技术 [28/40/44-Pin High-Performance, Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管PC时钟
文件页数/大小: 388 页 / 6899 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F2220/2320/4220/4320  
Control bit CFGS determines if the access will be to the  
configuration registers or to program memory/data  
EEPROM memory. When set, subsequent operations  
access configuration registers. When CFGS is clear,  
the EEPGD bit selects either program Flash or data  
EEPROM memory.  
7.0  
DATA EEPROM MEMORY  
The data EEPROM is readable and writable during nor-  
mal operation over the entire VDD range. The data  
memory is not directly mapped in the register file  
space. Instead, it is indirectly addressed through the  
Special Function Registers (SFR).  
The WREN bit enables and disables erase and write  
operations. When set, erase and write operations are  
allowed. When clear, erase and write operations are  
disabled; the WR bit cannot be set while the WREN bit  
is clear. This mechanism helps to prevent accidental  
writes to memory due to errant (unexpected) code  
execution.  
There are four SFRs used to read and write the  
program and data EEPROM memory. These registers  
are:  
• EECON1  
• EECON2  
• EEDATA  
• EEADR  
Firmware should keep the WREN bit clear at all times  
except when starting erase or write operations. Once  
firmware has set the WR bit, the WREN bit may be  
cleared. Clearing the WREN bit will not affect the  
operation in progress.  
The EEPROM data memory allows byte read and write.  
When interfacing to the data memory block, EEDATA  
holds the 8-bit data for read/write and EEADR holds the  
address of the EEPROM location being accessed.  
These devices have 256 bytes of data EEPROM with  
an address range from 00h to FFh.  
The WRERR bit is set when a write operation is inter-  
rupted by a Reset. In these situations, the user can  
check the WRERR bit and rewrite the location. It is nec-  
essary to reload the data and address registers  
(EEDATA and EEADR), as these registers have  
cleared as a result of the Reset.  
The EEPROM data memory is rated for high erase/write  
cycle endurance. A byte write automatically erases the  
location and writes the new data (erase-before-write). The  
write time is controlled by an on-chip timer. The write time  
will vary with voltage and temperature, as well as from  
chip to chip. Please refer to parameter D122 (Table 26-1  
in Section 26.0 “Electrical Characteristics”) for exact  
limits.  
Control bits, RD and WR, start read and erase/write  
operations, respectively. These bits are set by firmware  
and cleared by hardware at the completion of the  
operation.  
The RD bit cannot be set when accessing program  
memory (EEPGD = 1). Program memory is read using  
table read instructions. See Section 6.1 “Table Reads  
and Table Writes” regarding table reads.  
7.1  
EEADR  
The address register can address 256 bytes of data  
EEPROM.  
Note:  
Interrupt flag bit, EEIF in the PIR2 register,  
is set when write is complete. It must be  
cleared in software.  
7.2  
EECON1 and EECON2 Registers  
EECON1 is the control register for memory accesses.  
EECON2 is not a physical register. Reading EECON2  
will read all ‘0’s. The EECON2 register is used  
exclusively in the memory write and erase sequences.  
Control bit EEPGD determines if the access will be to  
program or data EEPROM memory. When clear, oper-  
ations will access the data EEPROM memory. When  
set, program memory is accessed.  
2003 Microchip Technology Inc.  
DS39599C-page 81  
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