PIC18F2220/2320/4220/4320
TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS
Standard Operating Conditions (unless otherwise stated)
DC Characteristics
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
Sym
No.
Characteristic
Min
Typ†
Max
Units
Conditions
Internal Program Memory
Programming Specifications
D110
D112
D113
VPP
IPP
Voltage on MCLR/VPP pin
Current into MCLR/VPP pin
9.00
—
—
—
—
13.25
300
V
(Note 2)
µA
mA
IDDP
Supply Current during
Programming
—
1.0
Data EEPROM Memory
D120
ED
Byte Endurance
100K
10K
1M
100K
—
—
E/W -40°C to +85°C
E/W -40°C to +125°C
D121 VDRW VDD for Read/Write
VMIN
—
5.5
V
Using EECON to read/write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time
D123 TRETD Characteristic Retention
—
4
—
—
ms
40
—
Year Provided no other
specifications are violated
D124
TREF
Number of Total Erase/Write
Cycles before Refresh(1)
1M
100K
10M
1M
—
—
E/W -40°C to +85°C
E/W -40°C to +125°C
Program Flash Memory
D130
D131
D132
EP
Cell Endurance
10K
1K
100K
10K
—
—
E/W -40°C to +85°C
E/W -40°C to +125°C
VPR
VDD for Read
VMIN
—
5.5
V
VMIN = Minimum operating
voltage
VIE
VDD for Block Erase
4.5
4.5
—
—
5.5
5.5
V
V
Using ICSP port
Using ICSP port
D132A VIW
VDD for Externally Timed Erase
or Write
D132B VPEW VDD for Self-timed Write
VMIN
—
5.5
V
VMIN = Minimum operating
voltage
D133
TIE
ICSP Block Erase Cycle Time
—
1
4
—
—
ms VDD > 4.5V
ms VDD > 4.5V
D133A TIW
ICSP Erase or Write Cycle Time
(externally timed)
—
D133A TIW
Self-timed Write Cycle Time
—
2
—
—
ms
D134 TRETD Characteristic Retention
40
—
Year Provided no other
specifications are violated
†
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
2: Required only if Low-Voltage Programming is disabled.
DS39599C-page 320
2003 Microchip Technology Inc.
MICROCHIP [ MICROCHIP ]
