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PIC16F916-I/SO 参数 Datasheet PDF下载

PIC16F916-I/SO图片预览
型号: PIC16F916-I/SO
PDF下载: 下载PDF文件 查看货源
内容描述: 40分之28 / 44/ 64引脚基于闪存的8位CMOS微控制器与LCD驱动器和纳瓦技术 [28/40/44/64-Pin Flash-Based, 8-Bit CMOS Microcontrollers with LCD Driver and nanoWatt Technology]
分类和应用: 驱动器闪存微控制器和处理器外围集成电路光电二极管PC时钟
文件页数/大小: 330 页 / 6045 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC16F913/914/916/917/946  
19.5 DC Characteristics: PIC16F913/914/916/917/946-I (Industrial)  
PIC16F913/914/916/917/946-E (Extended) (Continued)  
Standard Operating Conditions (unless otherwise stated)  
DC CHARACTERISTICS  
Operating temperature  
-40°C TA +85°C for industrial  
-40°C TA +125°C for extended  
Param  
No.  
Sym.  
Characteristic  
Min.  
Typ†  
Max. Units  
Conditions  
Capacitive Loading Specs on  
Output Pins  
D101* COSC2 OSC2 pin  
15  
50  
pF In XT, HS and LP modes when  
external clock is used to drive  
OSC1  
D101A* CIO  
All I/O pins  
pF  
Data EEPROM Memory  
Byte Endurance  
Byte Endurance  
VDD for Read/Write  
D120  
ED  
100K  
10K  
1M  
100K  
E/W -40°C TA +85°C  
E/W +85°C TA +125°C  
D120A ED  
D121  
VDRW  
VMIN  
5.5  
V
Using EECON1 to read/write  
VMIN = Minimum operating  
voltage  
D122  
D123  
TDEW  
Erase/Write Cycle Time  
Characteristic Retention  
5
6
ms  
TRETD  
40  
Year Provided no other specifications  
are violated  
D124  
TREF  
Number of Total Erase/Write  
Cycles before Refresh  
1M  
10M  
E/W -40°C TA +85°C  
(4)  
Program Flash Memory  
Cell Endurance  
D130  
EP  
10K  
1K  
100K  
10K  
E/W -40°C TA +85°C  
E/W +85°C TA +125°C  
D130A ED  
Cell Endurance  
D131  
VPR  
VDD for Read  
VMIN  
5.5  
V
VMIN = Minimum operating  
voltage  
D132  
D133  
D134  
VPEW  
TPEW  
TRETD  
VDD for Erase/Write  
4.5  
5.5  
3
V
Erase/Write cycle time  
Characteristic Retention  
ms  
40  
Year Provided no other specifications  
are violated  
*
These parameters are characterized but not tested.  
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are  
not tested.  
Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external  
clock in RC mode.  
2: Negative current is defined as current sourced by the pin.  
3: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent  
normal operating conditions. Higher leakage current may be measured at different input voltages.  
4: See Section 13.0 “Data EEPROM and Flash Program Memory Control” for additional information.  
5: Including OSC2 in CLKOUT mode.  
DS41250F-page 262  
© 2007 Microchip Technology Inc.  
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