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PIC16F88-I/P 参数 Datasheet PDF下载

PIC16F88-I/P图片预览
型号: PIC16F88-I/P
PDF下载: 下载PDF文件 查看货源
内容描述: 18 /20/ 28引脚增强型闪存微控制器采用纳瓦技术 [18/20/28-Pin Enhanced FLASH Microcontrollers with nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管PC时钟
文件页数/大小: 214 页 / 3543 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC16F87/88  
18.0 ELECTRICAL CHARACTERISTICS  
Absolute Maximum Ratings †  
Ambient temperature under bias.............................................................................................................-55°C to +125°C  
Storage temperature .............................................................................................................................. -65°C to +150°C  
Voltage on any pin with respect to VSS (except VDD and MCLR) ................................................... -0.3V to (VDD + 0.3V)  
Voltage on VDD with respect to VSS ............................................................................................................ -0.3 to +7.5V  
Voltage on MCLR with respect to VSS (Note 2) .............................................................................................-0.3 to +14V  
Total power dissipation (Note 1) ..................................................................................................................................1W  
Maximum current out of VSS pin ...........................................................................................................................200 mA  
Maximum current into VDD pin ..............................................................................................................................200 mA  
Input clamp current, IIK (VI < 0 or VI > VDD)..................................................................................................................... 20 mA  
Output clamp current, IOK (VO < 0 or VO > VDD) ............................................................................................................. 20 mA  
Maximum output current sunk by any I/O pin..........................................................................................................25 mA  
Maximum output current sourced by any I/O pin ....................................................................................................25 mA  
Maximum current sunk by PORTA........................................................................................................................100 mA  
Maximum current sourced by PORTA...................................................................................................................100 mA  
Maximum current sunk by PORTB........................................................................................................................100 mA  
Maximum current sourced by PORTB ..................................................................................................................100 mA  
Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD - IOH} + {(VDD - VOH) x IOH} + (VOl x IOL)  
2: Voltage spikes at the MCLR pin may cause latch-up. A series resistor of greater than 1 kshould be used  
to pull MCLR to VDD, rather than tying the pin directly to VDD.  
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the  
device. This is a stress rating only and functional operation of the device at those or any other conditions above those  
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for  
extended periods may affect device reliability.  
2003 Microchip Technology Inc.  
Preliminary  
DS30487B-page 163