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PIC16F690-I/SS 参数 Datasheet PDF下载

PIC16F690-I/SS图片预览
型号: PIC16F690-I/SS
PDF下载: 下载PDF文件 查看货源
内容描述: 20引脚基于闪存的8位CMOS微控制器采用纳瓦技术 [20-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管PC时钟
文件页数/大小: 294 页 / 5272 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC16F631/677/685/687/689/690  
When the data memory is code-protected, only the  
CPU is able to read and write data to the data  
10.2 Write Verify  
Depending on the application, good programming  
practice may dictate that the value written to the data  
EEPROM should be verified (see Example 10-4) to the  
desired value to be written.  
EEPROM. It is recommended to code-protect the pro-  
gram memory when code-protecting data memory.  
This prevents anyone from programming zeroes over  
the existing code (which will execute as NOPs) to reach  
an added routine, programmed in unused program  
memory, which outputs the contents of data memory.  
Programming unused locations in program memory to  
0’ will also help prevent data memory code protection  
from becoming breached.  
EXAMPLE 10-4:  
WRITE VERIFY  
BANKSEL EEDAT  
;
MOVF  
EEDAT, W  
;EEDAT not changed  
;from previous write  
BANKSEL EECON1  
;
BSF  
EECON1, RD  
;YES, Read the  
;value written  
;
BANKSEL EEDAT  
XORWF  
BTFSS  
GOTO  
:
EEDAT, W  
STATUS, Z  
WRITE_ERR  
;
;Is data the same  
;No, handle error  
;Yes, continue  
;Bank 0  
BANKSEL 0x00  
10.2.1  
USING THE DATA EEPROM  
The data EEPROM is  
a high-endurance, byte  
addressable array that has been optimized for the  
storage of frequently changing information (e.g.,  
program variables or other data that are updated often).  
When variables in one section change frequently, while  
variables in another section do not change, it is possible  
to exceed the total number of write cycles to the  
EEPROM (specification D124) without exceeding the  
total number of write cycles to  
a single byte  
(specifications D120 and D120A). If this is the case,  
then a refresh of the array must be performed. For this  
reason, variables that change infrequently (such as  
constants, IDs, calibration, etc.) should be stored in  
Flash program memory.  
10.3 Protection Against Spurious Write  
There are conditions when the user may not want to  
write to the data EEPROM memory. To protect against  
spurious EEPROM writes, various mechanisms have  
been built in. On power-up, WREN is cleared. Also, the  
Power-up  
Timer  
(64 ms  
duration)  
prevents  
EEPROM write.  
The write initiate sequence and the WREN bit together  
help prevent an accidental write during:  
• Brown-out  
• Power Glitch  
• Software Malfunction  
10.4 Data EEPROM Operation During  
Code-Protect  
Data memory can be code-protected by programming  
the CPD bit in the Configuration Word register  
(Register 14-1) to ‘0’.  
© 2007 Microchip Technology Inc.  
DS41262D-page 125  
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