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PIC16F57-I/SO 参数 Datasheet PDF下载

PIC16F57-I/SO图片预览
型号: PIC16F57-I/SO
PDF下载: 下载PDF文件 查看货源
内容描述: 基于闪存的8位CMOS微控制器系列 [Flash-Based, 8-Bit CMOS Microcontroller Series]
分类和应用: 闪存微控制器
文件页数/大小: 88 页 / 1373 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC16F5X  
11.2 DC Characteristics: PIC16F5X (Extended)  
Standard Operating Conditions (unless otherwise specified)  
Operating Temperature -40°C TA +125°C for extended  
DC CHARACTERISTICS  
Param  
Sym.  
Characteristic/Device  
Min. Typ† Max. Units  
Conditions  
No.  
D001 VDD Supply Voltage  
D002 VDR RAM Data Retention Voltage(1)  
2.0  
5.5  
V
V
V
1.5*  
VSS  
Device in Sleep mode  
D003 VPOR VDD Start Voltage to ensure  
See Section 5.1 “Power-on Reset  
(POR)” for details on Power-on Reset  
Power-on Reset  
D004 SVDD VDD Rise Rate to ensure  
0.05*  
V/ms See Section 5.1 “Power-on Reset  
(POR)” for details on Power-on Reset  
Power-on Reset  
D010 IDD  
Supply Current(2)  
170  
450  
μA FOSC = 4 MHz, VDD = 2.0V, XT or RC  
mode(3)  
0.4  
1.7  
15  
2.0  
7.0  
40  
mA FOSC = 10 MHz, VDD = 3.0V, HS mode  
mA FOSC = 20 MHz, VDD = 5.0V, HS mode  
μA FOSC = 32 kHz, VDD = 2.0V, LP mode,  
WDT disabled  
D020 IPD  
Power-down Current(2)  
1.0  
0.5  
15.0  
8.0  
μA VDD = 2.0V, WDT enabled  
μA VDD = 2.0V, WDT disabled  
*
These parameters are characterized but not tested.  
Data in “Typ” column is based on characterization results at 25°C. This data is for design guidance only and  
is not tested.  
Note 1: This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.  
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus  
loading, oscillator type, bus rate, internal code execution pattern and temperature, also have an impact on  
the current consumption.  
a) The test conditions for all IDD measurements in Active Operation mode are: OSC1 = external square  
wave, from rail-to-rail; all I/O pins tri-stated, pulled to VSS, T0CKI = VDD, MCLR = VDD; WDT enabled/  
disabled as specified.  
b) For standby current measurements, the conditions are the same, except that the device is in Sleep  
mode. The Power-down Current in Sleep mode does not depend on the oscillator type.  
3: Does not include current through REXT. The current through the resistor can be estimated by the formula:  
IR = VDD/2REXT (mA) with REXT in kΩ.  
© 2007 Microchip Technology Inc.  
DS41213D-page 61