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PIC16F877-20/PT 参数 Datasheet PDF下载

PIC16F877-20/PT图片预览
型号: PIC16F877-20/PT
PDF下载: 下载PDF文件 查看货源
内容描述: 40分之28引脚8位CMOS闪存微控制器 [28/40-pin 8-Bit CMOS FLASH Microcontrollers]
分类和应用: 闪存微控制器和处理器外围集成电路PC时钟
文件页数/大小: 200 页 / 3544 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC16F87X  
15.1  
DC Characteristics:  
PIC16F873/874/876/877-04 (Commercial, Industrial)  
PIC16F873/874/876/877-20 (Commercial, Industrial)  
Standard Operating Conditions (unless otherwise stated)  
Operating temperature -40°CTA +85°C for industrial and  
0°C TA +70°C for commercial  
DC CHARACTERISTICS  
Param  
No.  
Characteristic  
Sym  
Min Typ† Max Units  
Conditions  
D001 Supply Voltage  
D001A  
VDD  
4.0  
4.5  
VBOR*  
-
-
-
5.5  
5.5  
5.5  
V
V
V
XT, RC and LP osc configuration  
HS osc configuration  
BOR enabled, Fmax = 14MHz (Note 7)  
D002* RAM Data Retention  
Voltage (Note 1)  
VDR  
-
1.5  
-
V
D003  
VDD start voltage to  
ensure internal Power-on  
Reset signal  
VPOR  
-
VSS  
-
V
See section on Power-on Reset for details  
D004* VDD rise rate to ensure  
internal Power-on Reset  
signal  
SVDD  
0.05  
-
-
V/ms See section on Power-on Reset for details  
D005 Brown-out Reset Voltage VBOR  
3.7  
-
4.0 4.35  
V
BODEN bit in configuration word enabled  
D010  
D013  
Supply Current (Note 2,5) IDD  
1.6  
4
mA XT, RC osc configuration  
FOSC = 4 MHz, VDD = 5.5V (Note 4)  
-
-
7
15  
mA HS osc configuration  
FOSC = 20 MHz, VDD = 5.5V  
D015* Brown-out Reset Current IBOR  
85 200 µA BOR enabled VDD = 5.0V  
(Note 6)  
D020 Power-down Current  
D021 (Note 3,5)  
D021A  
IPD  
-
-
-
10.5 42 µA VDD = 4.0V, WDT enabled, -40°C to +85°C  
1.5  
1.5  
16  
19  
µA VDD = 4.0V, WDT disabled, -0°C to +70°C  
µA VDD = 4.0V, WDT disabled, -40°C to +85°C  
D023* Brown-out Reset Current IBOR  
-
85 200 µA BOR enabled VDD = 5.0V  
(Note 6)  
Legend: * These parameters are characterized but not tested.  
† Data in "Typ" column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance  
only and are not tested.  
Note 1: This is the limit to which VDD can be lowered without losing RAM data.  
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin  
loading and switching rate, oscillator type, internal code execution pattern and temperature also have an  
impact on the current consumption.  
The test conditions for all IDD measurements in active operation mode are:  
OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to VDD  
MCLR = VDD; WDT enabled/disabled as specified.  
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is  
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.  
4: For RC osc configuration, current through Rext is not included. The current through the resistor can be esti-  
mated by the formula Ir = VDD/2Rext (mA) with Rext in kOhm.  
5: Timer1 oscillator (when enabled) adds approximately 20 µA to the specification. This value is from character-  
ization and is for design guidance only. This is not tested.  
6: The current is the additional current consumed when this peripheral is enabled. This current should be  
added to the base IDD or IPD measurement.  
7: When BOR is enabled, the device will operate correctly until the VBOR voltage trip point is reached.  
DS30292B-page 154  
1999 Microchip Technology Inc.