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PIC16C57C-04I/SO 参数 Datasheet PDF下载

PIC16C57C-04I/SO图片预览
型号: PIC16C57C-04I/SO
PDF下载: 下载PDF文件 查看货源
内容描述: 基于ROM的8位CMOS微控制器系列 [ROM-Based 8-Bit CMOS Microcontroller Series]
分类和应用: 微控制器和处理器外围集成电路光电二极管PC可编程只读存储器时钟
文件页数/大小: 84 页 / 641 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC16CR54C  
10.1  
DC Characteristics:PIC16CR54C-04, 20 (Commercial)  
PIC16CR54C-04I, 20I (Industrial)  
Standard Operating Conditions (unless otherwise specified)  
DC Characteristics  
Power Supply Pins  
Operating Temperature  
0°C TA +70°C (commercial)  
–40°C TA +85°C (industrial)  
(1)  
Characteristic  
Sym Min Typ  
Max Units  
Conditions  
Supply Voltage  
XT, RC and LP options  
HS option  
VDD  
3.0  
4.5  
5.5  
5.5  
V
V
(2)  
RAM Data Retention Voltage  
VDR  
1.5*  
VSS  
V
V
Device in SLEEP mode  
VDD start voltage to ensure  
Power-On Reset  
VPOR  
See Section 7.4 for details on  
Power-on Reset  
VDD rise rate to ensure  
Power-On Reset  
SVDD  
IDD  
0.05*  
V/ms See Section 7.4 for details on  
Power-on Reset  
(3)  
Supply Current  
(4)  
XT and RC options  
1.8  
4.5  
14  
2.4 mA FOSC = 4.0 MHz, VDD = 5.5V  
HS option  
LP option, Commercial  
LP option, Industrial  
16  
32  
40  
mA FOSC = 20 MHz, VDD = 5.5V  
µA FOSC = 32 kHz, VDD = 3.0V, WDT disabled  
µA FOSC = 32 kHz, VDD = 3.0V, WDT disabled  
17  
(5)  
Power Down Current  
IPD  
Commercial  
4.0  
12  
µA VDD = 3.0V, WDT enabled  
µA VDD = 3.0V, WDT disabled  
µA VDD = 3.0V, WDT enabled  
µA VDD = 3.0V, WDT disabled  
0.25 4.0  
4.0 14  
0.25 5.0  
Industrial  
* These parameters are characterized but not tested.  
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C.This data is for design guidance  
only and is not tested.  
2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.  
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus  
loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on  
the current consumption.  
a) The test conditions for all IDD measurements in active operation mode are:  
OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to  
Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.  
b) For standby current measurements, the conditions are the same, except that  
the device is in SLEEP mode.  
4: Does not include current through Rext. The current through the resistor can be estimated by the  
formula: IR = VDD/2Rext (mA) with Rext in k.  
5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is  
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.  
DS40191A-page 54  
Preliminary  
1998 Microchip Technology Inc.  
 
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