PIC16C71X
Applicable Devices 710 71 711 715
15.0 ELECTRICAL CHARACTERISTICS FOR PIC16C71
Absolute Maximum Ratings †
Ambient temperature under bias.................................................................................................................-55 to +125˚C
Storage temperature .............................................................................................................................. -65˚C to +150˚C
Voltage on any pin with respect to VSS (except VDD, MCLR, and RA4)..........................................-0.3V to (VDD + 0.3V)
Voltage on VDD with respect to VSS .......................................................................................................... -0.3 to +7.5V
Voltage on MCLR with respect to VSS (Note 2)..................................................................................................0 to +14V
Voltage on RA4 with respect to Vss ...................................................................................................................0 to +14V
Total power dissipation (Note 1)...........................................................................................................................800 mW
Maximum current out of VSS pin ...........................................................................................................................150 mA
Maximum current into VDD pin ..............................................................................................................................100 mA
Input clamp current, IIK (VI < 0 or VI > VDD).....................................................................................................................± 20 mA
Output clamp current, IOK (VO < 0 or VO > VDD).............................................................................................................± 20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................20 mA
Maximum current sunk by PORTA ..........................................................................................................................80 mA
Maximum current sourced by PORTA.....................................................................................................................50 mA
Maximum current sunk by PORTB........................................................................................................................150 mA
Maximum current sourced by PORTB...................................................................................................................100 mA
Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)
Note 2: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.Thus,
a series resistor of 50-100Ω should be used when applying a “low” level to the MCLR pin rather than pulling
this pin directly to VSS.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device.This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
TABLE 15-1: CROSS REFERENCE OF DEVICE SPECS FOR OSCILLATOR CONFIGURATIONS
AND FREQUENCIES OF OPERATION (COMMERCIAL DEVICES)
OSC
PIC16C71-04
VDD: 4.0V to 6.0V
PIC16C71-20
PIC16LC71-04
VDD: 3.0V to 6.0V
JW Devices
VDD: 4.0V to 6.0V
VDD: 4.5V to 5.5V
IDD: 3.3 mA max. at 5.5V
IPD: 14 µA max. at 4V
Freq:4 MHz max.
IDD: 1.8 mA typ. at 5.5V
IPD: 1.0 µA typ. at 4V
Freq: 4 MHz max.
IDD: 1.4 mA typ. at 3.0V
IPD: 0.6 µA typ. at 3V
Freq: 4 MHz max.
IDD: 3.3 mA max. at 5.5V
IPD: 14 µA max. at 4V
Freq:4 MHz max.
RC
VDD: 4.0V to 6.0V
VDD: 4.5V to 5.5V
VDD: 3.0V to 6.0V
VDD: 4.0V to 6.0V
IDD: 3.3 mA max. at 5.5V
IPD: 14 µA max. at 4V
Freq: 4 MHz max.
IDD: 1.8 mA typ. at 5.5V
IPD: 1.0 µA typ. at 4V
Freq: 4 MHz max.
IDD: 1.4 mA typ. at 3.0V
IPD: 0.6 µA typ. at 3V
Freq: 4 MHz max.
IDD: 3.3 mA max. at 5.5V
IPD: 14 µA max. at 4V
Freq: 4 MHz max.
XT
HS
VDD: 4.5V to 5.5V
VDD: 4.5V to 5.5V
VDD: 4.5V to 5.5V
IDD: 13.5 mA typ. at 5.5V
IPD: 1.0 µA typ. at 4.5V
Freq: 4 MHz max.
IDD: 30 mA max. at 5.5V
IPD: 1.0 µA typ. at 4.5V
Freq: 20 MHz max.
IDD: 30 mA max. at 5.5V
IPD: 1.0 µA typ. at 4.5V
Freq: 20 MHz max.
Not recommended for use in
HS mode
VDD: 4.0V to 6.0V
IDD: 15 µA typ. at 32 kHz,
4.0V
IPD: 0.6 µA typ. at 4.0V
Freq: 200 kHz max.
VDD: 3.0V to 6.0V
IDD: 32 µA max. at 32 kHz,
3.0V
IPD: 9 µA max. at 3.0V
Freq: 200 kHz max.
VDD: 3.0V to 6.0V
IDD: 32 µA max. at 32 kHz,
3.0V
IPD: 9 µA max. at 3.0V
Freq: 200 kHz max.
Not recommended for use
in LP mode
LP
The shaded sections indicate oscillator selections which are tested for functionality, but not for MIN/MAX specifications. It is recom-
mended that the user select the device type that ensures the specifications required.
1997 Microchip Technology Inc.
DS30272A-page 135
MICROCHIP [ MICROCHIP ]
