PIC16C5X
PIC16C52
10.1
DC Characteristics: PIC16C52-04 (Commercial)
PIC16C52-04I (Industrial)
Standard Operating Conditions (unless otherwise specified)
DC Characteristics
Power Supply Pins
Operating Temperature
0°C ≤ TA ≤ +70°C (commercial)
–40°C ≤ TA ≤ +85°C (industrial)
(1)
Characteristic
Sym Min
Typ
Max Units
Conditions
Supply Voltage
VDD
VDR
IDD
3.0
—
—
6.25
—
V
V
FOSC = DC to 4 MHz
(2)
RAM Data Retention Voltage
1.5*
Device in SLEEP Mode
FOSC = 4 MHz, VDD = 5.5 V
(3,4)
Supply Current
—
1.8
3.3
mA
(5)
Power Down Current
IPD
—
Commercial
Industrial
0.6
0.6
9
12
µA
µA
VDD = 3.0 V
VDD = 3.0 V
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C.This data is for design guidance
only and is not tested.
2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on
the current consumption.
a) The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to
Vss, T0CKI = VDD, MCLR = VDD.
b) For standby current measurements, the conditions are the same, except that
the device is in SLEEP mode.
4: For RC option, does not include current through Rext. The current through the resistor can be estimated by
the formula: IR = VDD/2Rext (mA) with Rext in kΩ.
5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.
DS30453B-page 60
Preliminary
1998 Microchip Technology Inc.
MICROCHIP [ MICROCHIP ]
