PIC16F870/871
14.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Ambient temperature under bias.................................................................................................................-55 to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to VSS (except VDD, MCLR. and RA4).......................................... -0.3V to (VDD + 0.3V)
Voltage on VDD with respect to VSS ............................................................................................................ -0.3 to +7.5V
Voltage on MCLR with respect to VSS (Note 2).............................................................................................0 to +13.25V
Voltage on RA4 with respect to Vss..................................................................................................................0 to +8.5V
Total power dissipation (Note 1)................................................................................................................................1.0W
Maximum current out of VSS pin ...........................................................................................................................300 mA
Maximum current into VDD pin ..............................................................................................................................250 mA
Input clamp current, IIK (VI < 0 or VI > VDD)..................................................................................................................... ± 20 mA
Output clamp current, IOK (VO < 0 or VO > VDD) ............................................................................................................. ± 20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA, PORTB, and PORTE (combined) (Note 3)....................................................200 mA
Maximum current sourced by PORTA, PORTB, and PORTE (combined) (Note 3) ..............................................200 mA
Maximum current sunk by PORTC and PORTD (combined) (Note 3)..................................................................200 mA
Maximum current sourced by PORTC and PORTD (combined) (Note 3).............................................................200 mA
Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD - VOH) x IOH} + ∑(VOl x IOL)
2: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up. Thus,
a series resistor of 50-100Ω should be used when applying a “low” level to the MCLR pin, rather than pulling
this pin directly to VSS.
3: PORTD and PORTE are not implemented on the 28-pin devices.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
1999 Microchip Technology Inc.
Preliminary
DS30569A-page 119
MICROCHIP [ MICROCHIP ]
