PIC16CE62X
13.1
DC CHARACTERISTICS:
PIC16CE62X-04 (Commercial, Industrial, Extended)
PIC16CE62X-20 (Commercial, Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
–40°C ≤ TA ≤ +85°C for industrial and
0°C ≤ TA ≤ +70°C for commercial and
–40°C ≤ TA ≤ +125°C for extended
Param
Sym
Characteristic
Min
Typ† Max Units
Conditions
No.
D001
D001A
VDD
Supply Voltage
3.0
4.5
-
-
5.5
5.5
V
V
XT, RC and LP osc configuration
HS osc configuration
D002
D003
D004
VDR
RAM Data Retention
Voltage (Note 1)
–
1.5*
VSS
–
–
–
–
V
Device in SLEEP mode
VPOR
SVDD
VBOR
IDD
VDD start voltage to
ensure Power-on Reset
–
V
See section on power-on reset for
details
VDD rise rate to ensure
Power-on Reset
0.05*
V/ms See section on power-on reset for
details
D005
D005A
Brown-out Reset Voltage
3.7
3.7
4.0
4.0
4.3
4.4
V
BODEN configuration bit is cleared
(Automotive)
D010
Supply Current (Note 2)
–
1.8
3.3
mA XT and RC osc configuration
FOSC = 4 MHz, VDD = 5.5V, WDT dis-
abled (Note 4)
D010A
–
35
70
µA
LP osc configuration,
PIC16CE62X-04 only
FOSC = 32 kHz, VDD = 4.0V, WDT dis-
abled
D013
–
–
3.0
1.0
7.5
mA HS osc configuration
FOSC = 20 MHz, VDD = 5.5V, WDT dis-
abled
D021
D022
IPD
Power Down Current (Note 3)
WDT Current (Note 5)
2.5
15
µA
µA
VDD=4.0V, WDT disabled
(125°C)
∆IWDT
–
–
–
–
6.0
75
60
90
20
25
150
µA
µA
µA
VDD = 4.0V
(125°C)
BOR enabled, VDD = 5.0V
D022A ∆IBOR
D023 ∆ICOMP
D023A ∆IVREF
Brown-out Reset Current (Note
5)
Comparator Current for each
Comparator (Note 5)
VREF Current (Note 5)
100
200
µA
µA
VDD = 4.0V
VDD = 4.0V
*
These parameters are characterized but not tested.
†
Data in "Typ" column is at 5.0V, 25°C, unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-
sumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD,
MCLR = VDD; WDT enabled/disabled as specified.
3: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with
the part in SLEEP mode, with all I/O pins in hi-impedence state and tied to VDD or VSS.
4: For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the
formula Ir = VDD/2Rext (mA) with Rext in kΩ.
5: The ∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the
base IDD or IPD measurement.
1998 Microchip Technology Inc.
Preliminary
DS40182A-page 83
MICROCHIP [ MICROCHIP ]
