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PIC12F683-I/P 参数 Datasheet PDF下载

PIC12F683-I/P图片预览
型号: PIC12F683-I/P
PDF下载: 下载PDF文件 查看货源
内容描述: 8引脚基于闪存的8位CMOS微控制器采用纳瓦技术 [8-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology]
分类和应用: 闪存微控制器
文件页数/大小: 176 页 / 2994 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC12F683  
15.0 ELECTRICAL SPECIFICATIONS  
(†)  
Absolute Maximum Ratings  
Ambient temperature under bias..........................................................................................................-40° to +125°C  
Storage temperature ........................................................................................................................ -65°C to +150°C  
Voltage on VDD with respect to VSS ................................................................................................... -0.3V to +6.5V  
Voltage on MCLR with respect to Vss ............................................................................................... -0.3V to +13.5V  
Voltage on all other pins with respect to VSS ........................................................................... -0.3V to (VDD + 0.3V)  
Total power dissipation(1) ............................................................................................................................... 800 mW  
Maximum current out of VSS pin ...................................................................................................................... 95 mA  
Maximum current into VDD pin ......................................................................................................................... 95 mA  
Input clamp current, IIK (VI < 0 or VI > VDD)............................................................................................................... 20 mA  
Output clamp current, IOK (Vo < 0 or Vo >VDD)......................................................................................................... 20 mA  
Maximum output current sunk by any I/O pin....................................................................................................25 mA  
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA  
Maximum current sunk by GPIO...................................................................................................................... 90 mA  
Maximum current sourced GPIO...................................................................................................................... 90 mA  
Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD IOH} + {(VDD – VOH) x IOH} + (VOl x IOL).  
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the  
device. This is a stress rating only and functional operation of the device at those or any other conditions above those  
indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for  
extended periods may affect device reliability.  
© 2007 Microchip Technology Inc.  
DS41211D-page 115