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PIC12F629IMF 参数 Datasheet PDF下载

PIC12F629IMF图片预览
型号: PIC12F629IMF
PDF下载: 下载PDF文件 查看货源
内容描述: 8引脚基于闪存的8位CMOS微控制器 [8-Pin FLASH-Based 8-Bit CMOS Microcontrollers]
分类和应用: 闪存微控制器
文件页数/大小: 132 页 / 4519 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC12F629/675  
12.0 ELECTRICAL SPECIFICATIONS  
Absolute Maximum Ratings†  
Ambient temperature under bias........................................................................................................... -40 to +±25°C  
Storage temperature ........................................................................................................................ -65°C to +±50°C  
Voltage on VDD with respect to VSS ..................................................................................................... -0.3 to +6.5V  
Voltage on MCLR with respect to Vss ..................................................................................................-0.3 to +±3.5V  
Voltage on all other pins with respect to VSS ........................................................................... -0.3V to (VDD + 0.3V)  
(1)  
Total power dissipation ...............................................................................................................................800 mW  
Maximum current out of VSS pin ..................................................................................................................... 300 mA  
Maximum current into VDD pin ........................................................................................................................ 250 mA  
Input clamp current, IIK (VI < 0 or VI > VDD)............................................................................................................... 20 mA  
Output clamp current, IOK (Vo < 0 or Vo >VDD)......................................................................................................... 20 mA  
Maximum output current sunk by any I/O pin.................................................................................................... 25 mA  
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA  
Maximum current sunk by all GPIO ................................................................................................................ ±25 mA  
Maximum current sourced all GPIO................................................................................................................ ±25 mA  
Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD - IOH} + {(VDD-VOH) x IOH} + (VOl x IOL).  
† NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the  
device. This is a stress rating only and functional operation of the device at those or any other conditions above those  
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for  
extended periods may affect device reliability.  
Note: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latchup. Thus,  
a series resistor of 50-±00 should be used when applying a "low" level to the MCLR pin, rather than pulling  
this pin directly to VSS.  
2003 Microchip Technology Inc.  
DS41190C-page 83