PIC12C5XX
11.0 ELECTRICAL CHARACTERISTICS - PIC12C508/PIC12C509
Absolute Maximum Ratings†
Ambient Temperature under bias........................................................................................................... –40°C to +125°C
Storage Temperature ............................................................................................................................. –65°C to +150°C
Voltage on VDD with respect to VSS .................................................................................................................0 to +7.5 V
Voltage on MCLR with respect to VSS...............................................................................................................0 to +14 V
Voltage on all other pins with respect to VSS ............................................................................... –0.6 V to (VDD + 0.6 V)
(1)
Total Power Dissipation ....................................................................................................................................700 mW
Max. Current out of VSS pin ..................................................................................................................................200 mA
Max. Current into VDD pin .....................................................................................................................................150 mA
Input Clamp Current, IIK (VI < 0 or VI > VDD).................................................................................................................... ±20 mA
Output Clamp Current, IOK (VO < 0 or VO > VDD)............................................................................................................. ±20 mA
Max. Output Current sunk by any I/O pin................................................................................................................25 mA
Max. Output Current sourced by any I/O pin...........................................................................................................25 mA
Max. Output Current sourced by I/O port (GPIO) .................................................................................................100 mA
Max. Output Current sunk by I/O port (GPIO )......................................................................................................100 mA
Note 1: Power Dissipation is calculated as follows: PDIS = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOL x IOL)
†
NOTICE: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
1999 Microchip Technology Inc.
DS40139E-page 65
MICROCHIP [ MICROCHIP ]
