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PIC12F629-I/SNVAO 参数 Datasheet PDF下载

PIC12F629-I/SNVAO图片预览
型号: PIC12F629-I/SNVAO
PDF下载: 下载PDF文件 查看货源
内容描述: [RISC Microcontroller, 8-Bit, FLASH, 20MHz, CMOS, PDSO8]
分类和应用: 闪存微控制器
文件页数/大小: 136 页 / 1422 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC12F629/675  
12.5 DC Characteristics: PIC12F629/675-E (Extended)  
Standard Operating Conditions (unless otherwise stated)  
Operating temperature  
-40C TA +125C for extended  
Conditions  
Param  
No.  
Device Characteristics  
Min  
Typ†  
Max Units  
VDD  
Note  
D020E Power-down Base Current  
(IPD)  
0.00099 3.5  
A  
A  
A  
A  
A  
A  
A  
A  
A  
A  
A  
A  
A  
A  
A  
A  
A  
A  
A  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
3.0  
5.0  
WDT, BOD, Comparators, VREF,  
and T1OSC disabled  
0.0012  
0.0029  
0.3  
4.0  
8.0  
6.0  
9.0  
20  
D021E  
WDT Current(1)  
1.8  
8.4  
D022E  
D023E  
58  
70  
BOD Current(1)  
109  
3.3  
130  
10  
Comparator Current(1)  
6.1  
13  
11.5  
58  
24  
D024E  
D025E  
D026E  
70  
CVREF Current(1)  
T1 OSC Current(1)  
A/D Current(1)  
85  
100  
165  
10  
138  
4.0  
4.6  
12  
6.0  
20  
0.0012  
0.0022  
6.0  
8.5  
† Data in “Typ” column is at 5.0V, 25C unless otherwise stated. These parameters are for design guidance  
only and are not tested.  
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this  
peripheral is enabled. The peripheral current can be determined by subtracting the base IDD or IPD  
current from this limit. Max values should be used when calculating total current consumption.  
2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is  
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.  
DS41190G-page 92  
2010 Microchip Technology Inc.  
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