MCP73831/2
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, all limits apply for V
DD
= [V
REG
(typ.) + 0.3V] to 6V, T
A
= -40°C to +85°C.
Typical values are at +25°C, V
DD
= [V
REG
(typ.) + 1.0V]
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)
Precondition Current
Ratio
I
PREG
/ I
REG
7.5
15
30
—
Precondition Voltage
Threshold Ratio
Precondition Hysteresis
Charge Termination
Charge Termination
Current Ratio
I
TERM
/ I
REG
3.75
5.6
7.5
15
Automatic Recharge
Recharge Voltage
Threshold Ratio
V
RTH
/ V
REG
91.5
94
R
DSON
I
DISCHARGE
—
—
—
—
—
Status Indicator – STAT
Sink Current
Low Output Voltage
Source Current
High Output Voltage
Input Leakage Current
PROG Input
Charge Impedance
Range
Minimum Shutdown
Impedance
Automatic Power Down
Automatic Power Down
Entry Threshold
Automatic Power Down
Exit Threshold
Thermal Shutdown
Die Temperature
Die Temperature
Hysteresis
Note 1:
T
SD
T
SDHYS
—
—
150
10
—
—
°C
°C
V
PDENTER
V
PDEXIT
V
DD
<(V
BAT
+20mV)
—
V
DD
<(V
BAT
+50mV)
V
DD
<(V
BAT
+150mV)
—
V
DD
<(V
BAT
+200mV)
3.5V
≤
V
BAT
≤
V
REG
V
DD
Falling
3.5V
≤
V
BAT
≤
V
REG
V
DD
Rising
R
PROG
R
PROG
2
70
—
—
20
200
kΩ
kΩ
I
SINK
V
OL
I
SOURCE
V
OH
I
LK
—
—
—
—
—
—
0.4
—
V
DD
-0.4
0.03
25
1
35
V
DD
- 1
1
mA
V
mA
V
μA
I
SOURCE
= 4 mA (MCP73831)
High-Impedance
I
SINK
= 4 mA
94.0
96.5
350
0.15
0.25
0.15
-5.5
96.5
99
—
2
2
2
-15
%
%
mΩ
μA
μA
μA
μA
V
BAT
High-to-Low
V
BAT
High-to-Low
V
DD
= 3.75V, T
J
= 105°C
PROG Floating
V
DD
Floating
V
DD
< V
STOP
Charge Complete
5
7.5
10
20
6.25
9.4
12.5
25
%
%
%
%
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
T
A
= -5°C to +55°C
V
PTH
/ V
REG
V
PHYS
64
69
—
10
20
40
100
66.5
71.5
110
12.5
25
50
—
69
74
—
%
%
%
%
%
%
mV
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
No Preconditioning
T
A
= -5°C to +55°C
V
BAT
Low-to-High
V
BAT
Low-to-High
V
BAT
High-to-Low
Pass Transistor ON-Resistance
ON-Resistance
Battery Discharge Current
Output Reverse Leakage
Current
Not production tested. Ensured by design.
DS21984B-page 4
©
2006 Microchip Technology Inc.
MICROCHIP [ MICROCHIP TECHNOLOGY ]
