MCP6541/1R/1U/2/3/4
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C,VIN+ = VDD/2,
VIN– = VSS, and RL = 100 kΩ to VDD/2 (Refer to Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Push-Pull Output
High-Level Output Voltage
Low-Level Output Voltage
Short-Circuit Current
VOH
VOL
ISC
VDD−0.2
—
—
—
VSS+0.2
—
V
V
I
I
= -2 mA, V = 5V
DD
OUT
—
—
—
= 2 mA, V = 5V
OUT
DD
-2.5, +1.5
±30
mA
mA
VDD = 1.6V (Note 4)
VDD = 5.5V (Note 4)
ISC
—
Note 1: The input offset voltage is the center (average) of the input-referred trip points. The input hysteresis is the difference
between the input-referred trip points.
2: VHYST at different temperatures is estimated using VHYST (TA) = VHYST + (TA - 25°C) TC1 + (TA - 25°C)2 TC2.
3: Input bias current at temperature is not tested for SC-70-5 package.
4: Limit the output current to Absolute Maximum Rating of 30 mA.
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2,
Step = 200 mV, Overdrive = 100 mV, and CL = 36 pF (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Rise Time
Fall Time
tR
—
—
—
—
—
—
—
—
0.85
0.85
4
—
—
8
µs
µs
µs
µs
µs
tF
Propagation Delay (High-to-Low)
Propagation Delay (Low-to-High)
Propagation Delay Skew
tPHL
tPLH
tPDS
fMAX
fMAX
Eni
4
8
±0.2
160
120
200
—
—
—
—
(Note 1)
Maximum Toggle Frequency
kHz VDD = 1.6V
kHz VDD = 5.5V
Input Noise Voltage
µVP-P 10 Hz to 100 kHz
Note 1: Propagation Delay Skew is defined as: tPDS = tPLH - tPHL
.
MCP6543 CHIP SELECT (CS) CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = VSS
,
and CL= 36 pF (Refer to Figures 1-1 and 1-3).
Parameters
Sym
Min
Typ
Max Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
VIL
VSS
—
—
0.2 VDD
—
V
CS Input Current, Low
ICSL
5.0
pA
CS = VSS
CS High Specifications
CS Logic Threshold, High
VIH
ICSH
IDD
0.8 VDD
—
1
VDD
—
V
CS Input Current, High
—
—
—
—
pA
pA
pA
pA
CS = VDD
CS = VDD
CS = VDD
CS Input High, VDD Current
CS Input High, GND Current
Comparator Output Leakage
CS Dynamic Specifications
18
–20
1
—
ISS
—
IO(LEAK)
—
VOUT = VDD, CS = VDD
CS Low to Comparator Output Low
Turn-on Time
tON
tOFF
—
—
—
2
50
—
—
ms
µs
V
CS = 0.2 VDD to VOUT = VDD/2,
V
IN– = VDD
CS = 0.8 VDD to VOUT = VDD/2,
IN– = VDD
VDD = 5V
CS High to Comparator Output
High Z Turn-off Time
10
0.6
V
CS Hysteresis
VCS_HYST
© 2006 Microchip Technology Inc.
DS21696E-page 3
MICROCHIP [ MICROCHIP ]
