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MCP4132-104E/MS 参数 Datasheet PDF下载

MCP4132-104E/MS图片预览
型号: MCP4132-104E/MS
PDF下载: 下载PDF文件 查看货源
内容描述: 7/8位单/双SPI数字电位器具有易失性存储器 [7/8-Bit Single/Dual SPI Digital POT with Volatile Memory]
分类和应用: 电位器存储
文件页数/大小: 88 页 / 2525 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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MCP413X/415X/423X/425X
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
Voltage on V
DD
with respect to V
SS
............... -0.6V to +7.0V
Voltage on CS, SCK, SDI, SDI/SDO, and
SHDN with respect to V
SS ......................................
-0.6V to 12.5V
Voltage on all other pins (PxA, PxW, PxB, and
SDO) with respect to V
SS ............................
-0.3V to V
DD
+ 0.3V
Input clamp current, I
IK
(V
I
< 0, V
I
> V
DD
, V
I
> V
PP ON
HV pins) ......................±20 mA
Output clamp current, I
OK
(V
O
< 0 or V
O
> V
DD
) ..................................................±20 mA
Maximum output current sunk by any Output pin
......................................................................................25 mA
Maximum output current sourced by any Output pin
......................................................................................25 mA
Maximum current out of V
SS
pin .................................100 mA
Maximum current into V
DD
pin ....................................100 mA
Maximum current into P
X
A, P
X
W & P
X
B pins ............±2.5 mA
Storage temperature ....................................-65°C to +150°C
Ambient temperature with power applied
.....................................................................-40°C to +125°C
Total power dissipation (Note
1)
................................400 mW
Soldering temperature of leads (10 seconds) ............. +300°C
ESD protection on all pins
.................................. ≥
4 kV (HBM),
..........................................................................
300V (MM)
Maximum Junction Temperature (T
J
) ......................... +150°C
Note 1:
Power dissipation is calculated as follows:
Pdis = V
DD
x {I
DD
-
I
OH
} +
{(V
DD
-V
OH
) x I
OH
} +
∑(V
O
l x I
OL
)
©
2008 Microchip Technology Inc.
DS22060B-page 3