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MCP1402 参数 Datasheet PDF下载

MCP1402图片预览
型号: MCP1402
PDF下载: 下载PDF文件 查看货源
内容描述: 微小500毫安,高速功率MOSFET驱动器 [Tiny 500 mA, High-Speed Power MOSFET Driver]
分类和应用: 驱动器
文件页数/大小: 20 页 / 252 K
品牌: MICROCHIP [ MICROCHIP ]
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MCP1401/02  
4.0  
4.1  
APPLICATION INFORMATION  
VDD = 18V  
1 µF  
General Information  
0.1 µF  
Ceramic  
MOSFET drivers are high-speed, high current devices  
which are intended to source/sink high peak currents to  
charge/discharge the gate capacitance of external  
MOSFETs or IGBTs. In high frequency switching power  
supplies, the PWM controller may not have the drive  
capability to directly drive the power MOSFET. A MOS-  
FET driver like the MCP1401/02 family can be used to  
provide additional source/sink current capability.  
Input  
Output  
CL = 470 pF  
MCP1402  
4.2  
MOSFET Driver Timing  
The ability of a MOSFET driver to transition from a fully  
off state to a fully on state are characterized by the  
drivers rise time (tR), fall time (tF), and propagation  
delays (tD1 and tD2). The MCP1401/02 family of drivers  
can typically charge and discharge a 470 pF load  
capacitance in 19 ns along with a typical matched  
propagation delay of 35 ns. Figure 4-1 and Figure 4-2  
show the test circuit and timing waveform used to verify  
the MCP1401/02 timing.  
+5V  
90%  
Input  
10%  
0V  
18V  
90%  
90%  
tD1  
tD2  
tF  
tR  
Output  
0V  
10%  
10%  
VDD = 18V  
FIGURE 4-2:  
Non-Inverting Driver Timing  
Waveform.  
0.1 µF  
Ceramic  
1 µF  
4.3  
Decoupling Capacitors  
Careful layout and decoupling capacitors are highly  
recommended when using MOSFET drivers. Large  
currents are required to charge and discharge  
capacitive loads quickly. For example, approximately  
550 mA are needed to charge a 470 pF load with 18V  
in 15 ns.  
Input  
Output  
CL = 470 pF  
MCP1401  
To operate the MOSFET driver over a wide frequency  
range with low supply impedance, a ceramic and low  
ESR film capacitor is recommended to be placed in  
parallel between the driver VDD and GND. A 1.0 µF low  
ESR film capacitor and a 0.1 µF ceramic capacitor  
placed between pins 2 and 1 should be used. These  
capacitors should be placed close to the driver to  
minimized circuit board parasitics and provide a local  
source for the required current.  
+5V  
90%  
Input  
0V  
10%  
tD1  
90%  
10%  
Inverting Driver Timing  
tD2  
tF  
tR  
18V  
90%  
Output  
4.4  
PCB Layout Considerations  
10%  
0V  
Proper PCB layout is important in a high current, fast  
switching circuit to provide proper device operation and  
robustness of design. PCB trace loop area and  
inductance should be minimized by the use of ground  
planes or trace under MOSFET gate drive signals,  
separate analog and power grounds, and local driver  
decoupling.  
FIGURE 4-1:  
Waveform.  
Placing a ground plane beneath the MCP1401/02 will  
help as a radiated noise shield as well as providing  
some heat sinking for power dissipated within the  
device.  
DS22052A-page 10  
© 2007 Microchip Technology Inc.  
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