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93LC86C-I/SN 参数 Datasheet PDF下载

93LC86C-I/SN图片预览
型号: 93LC86C-I/SN
PDF下载: 下载PDF文件 查看货源
内容描述: 1K - 16K与Microwire兼容串行EEPROM [1K-16K Microwire Compatible Serial EEPROMs]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 38 页 / 703 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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93XX46X/56X/66X/76X/86X
3.4
ERASE
The
ERASE
instruction forces all data bits of the
specified address to the logical ‘1’ state. CS is brought
low following the loading of the last address bit. This
falling edge of the CS pin initiates the self-timed
programming cycle, except on ‘93CXX’ devices where
the rising edge of CLK before the last address bit
initiates the write cycle.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL
). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been erased and
the device is ready for another instruction.
Note:
After the Erase cycle is complete, issuing
a Start bit and then taking CS low will clear
the Ready/Busy status from DO.
FIGURE 3-1:
ERASE TIMING FOR 93AAXX AND 93LCXX DEVICES
T
CSL
CS
Check Status
CLK
DI
High-Z
1
1
1
A
N
A
N
-1 A
N
-2
•••
A0
T
SV
DO
B
USY
T
WC
Ready
T
CZ
High-Z
FIGURE 3-2:
ERASE TIMING FOR 93CXX DEVICES
T
CSL
CS
Check Status
CLK
DI
High-Z
1
1
1
A
N
A
N
-1 A
N
-2
•••
A0
T
SV
DO
Busy
T
WC
Ready
T
CZ
High-Z
©
2007 Microchip Technology Inc.
DS21929D-page 11