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93LC46B-I/SNX 参数 Datasheet PDF下载

93LC46B-I/SNX图片预览
型号: 93LC46B-I/SNX
PDF下载: 下载PDF文件 查看货源
内容描述: [64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8, ROHS COMPLIANT, PLASTIC, SOIC-8]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 20 页 / 330 K
品牌: MICROCHIP [ MICROCHIP ]
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93LC46/56/66  
After power-up, the device is automatically in the  
EWDS mode. Therefore, an EWEN instruction must be  
performed before any ERASE or WRITE instruction can  
be executed.  
2.0  
FUNCTIONAL DESCRIPTION  
When the ORG pin is connected to VCC, the (x16)  
organization is selected. When it is connected to  
ground, the (x8) organization is selected. Instruc-  
tions, addresses and write data are clocked into the  
DI pin on the rising edge of the clock (CLK). The DO  
pin is normally held in a high-Z state except when  
reading data from the device, or when checking the  
Ready/Busy status during a programming operation.  
The Ready/Busy status can be verified during an  
erase/write operation by polling the DO pin; DO low  
indicates that programming is still in progress, while  
DO high indicates the device is ready. The DO will  
enter the high-Z state on the falling edge of the CS.  
2.4  
Read  
The READ instruction outputs the serial data of the  
addressed memory location on the DO pin. A dummy  
zero bit precedes the 16-bit (x16 organization) or 8-bit  
(x8 organization) output string. The output data bits will  
toggle on the rising edge of the CLK and are stable  
after the specified time delay (TPD). Sequential read is  
possible when CS is held high. The memory data will  
automatically cycle to the next register and output  
sequentially.  
2.1  
Start Condition  
2.5  
Erase/Write Enable and Disable  
(EWEN, EWDS)  
The Start bit is detected by the device if CS and DI are  
both high with respect to the positive edge of CLK for  
the first time.  
The 93LC46/56/66 power up in the Erase/Write Disable  
(EWDS) state. All programming modes must be  
preceded by an Erase/Write Enable (EWEN) instruction.  
Once the EWEN instruction is executed, programming  
remains enabled until an EWDS instruction is executed  
or VCC is removed from the device. To protect against  
accidental data disturb, the EWDS instruction can be  
used to disable all erase/write functions and should  
follow all programming operations. Execution of a READ  
instruction is independent of both the EWEN and EWDS  
instructions.  
Before a Start condition is detected, CS, CLK and DI  
may change in any combination (except to that of a  
Start condition), without resulting in any device opera-  
tion (Read, Write, Erase, EWEN, EWDS, ERAL and  
WRAL). As soon as CS is high, the device is no longer  
in the Standby mode.  
An instruction following a Start condition will only be  
executed if the required amount of opcode, address  
and data bits for any particular instruction is clocked in.  
After execution of an instruction (i.e., clock in or out of  
the last required address or data bit) CLK and DI  
become “don't care” bits until a new Start condition is  
detected.  
2.6  
Erase  
The ERASE instruction forces all data bits of the speci-  
fied address to the logical “1” state. CS is brought low  
following the loading of the last address bit. This falling  
edge of the CS pin initiates the self-timed programming  
cycle.  
2.2  
Data In/Data Out (DI/DO)  
It is possible to connect the Data In and Data Out pins  
together. However, with this configuration it is possible  
for a “bus conflict” to occur during the “dummy zero”  
that precedes the read operation, if A0 is a logic high  
level. Under such a condition the voltage level seen at  
Data Out is undefined and will depend upon the relative  
impedances of Data Out and the signal source driving  
A0. The higher the current sourcing capability of A0,  
the higher the voltage at the Data Out pin.  
The DO pin indicates the Ready/Busy status of the  
device if CS is brought high after a minimum of 250 ns  
low (TCSL). DO at logical “0” indicates that program-  
ming is still in progress. DO at logical “1” indicates that  
the register at the specified address has been erased  
and the device is ready for another instruction.  
The erase cycle takes 4 ms per word typical.  
2.3  
Data Protection  
During power-up, all programming modes of operation  
are inhibited until VCC has reached a level greater than  
1.4V. During power-down, the source data protection  
circuitry acts to inhibit all programming modes when  
VCC has fallen below 1.4V at nominal conditions.  
The EWEN and EWDS commands give additional  
protection against accidentally programming during  
normal operation.  
DS21712B-page 6  
2004 Microchip Technology Inc.  
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