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93LC46B-I/SNG 参数 Datasheet PDF下载

93LC46B-I/SNG图片预览
型号: 93LC46B-I/SNG
PDF下载: 下载PDF文件 查看货源
内容描述: 1K的Microwire兼容串行EEPROM [1K Microwire Compatible Serial EEPROM]
分类和应用: 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 24 页 / 388 K
品牌: MICROCHIP [ MICROCHIP ]
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93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C  
The DO pin indicates the READY/BUSY status of the  
device if CS is brought high after a minimum of 250 ns  
low (TCSL).  
2.9  
WRITE ALL (WRAL)  
The Write All (WRAL) instruction will write the entire  
memory array with the data specified in the command.  
For 93AA46A/B/C and 93LC46A/B/C devices, after the  
last data bit is clocked into DI, the falling edge of CS  
initiates the self-timed auto-erase and programming  
cycle. For 93C46A/B/C devices, the self-timed auto-  
erase and programming cycle is initiated by the rising  
edge of CLK on the last data bit. Clocking of the CLK  
pin is not necessary after the device has entered the  
WRAL cycle. The WRAL command does include an  
automatic ERAL cycle for the device. Therefore, the  
WRALinstruction does not require an ERALinstruction  
but the chip must be in the EWEN status.  
Note:  
Issuing a Start bit and then taking CS low  
will clear the READY/BUSY status from  
DO.  
VCC must be 4.5V for proper operation of WRAL.  
FIGURE 2-10:  
WRAL TIMING FOR 93AA AND 93LC DEVICES  
TCSL  
CS  
CLK  
DI  
0
0
1
X
1
0
•••  
Dx  
•••  
X
D0  
TSV  
TCZ  
HIGH-Z  
BUSY  
READY  
DO  
HIGH-Z  
TWL  
VCC must be 4.5V for proper operation of WRAL.  
FIGURE 2-11:  
WRAL TIMING FOR 93C DEVICES  
TCSL  
CS  
CLK  
DI  
0
0
1
X
1
0
•••  
Dx  
•••  
X
D0  
TSV  
TCZ  
HIGH-Z  
BUSY  
READY  
DO  
HIGH-Z  
TWL  
DS21749D-page 10  
2003 Microchip Technology Inc.