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93C465AT-E/MS 参数 Datasheet PDF下载

93C465AT-E/MS图片预览
型号: 93C465AT-E/MS
PDF下载: 下载PDF文件 查看货源
内容描述: 1K - 16K与Microwire兼容串行EEPROM [1K-16K Microwire Compatible Serial EEPROMs]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 38 页 / 703 K
品牌: MICROCHIP [ MICROCHIP ]
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93XX46X/56X/66X/76X/86X  
3.3  
Data Protection  
3.0  
FUNCTIONAL DESCRIPTION  
All modes of operation are inhibited when VCC is below  
a typical voltage of 1.5V for ‘93AAXX’ and ‘93LCXX’  
devices or 3.8V for ‘93CXX’ devices.  
When the ORG pin is connected to VCC, the (x16)  
organization is selected. When it is connected to  
ground, the (x8) organization is selected. Instruc-  
tions, addresses and write data are clocked into the  
DI pin on the rising edge of the clock (CLK). The DO  
pin is normally held in a High-Z state except when  
reading data from the device, or when checking the  
Ready/Busy status during a programming operation.  
The Ready/Busy status can be verified during an  
Erase/Write operation by polling the DO pin; DO low  
indicates that programming is still in progress, while  
DO high indicates the device is ready. DO will enter  
the High-Z state on the falling edge of CS.  
The EWEN and EWDS commands give additional  
protection against accidentally programming during  
normal operation.  
Note:  
For added protection, an EWDS command  
should be performed after every write  
operation and an external 10 kΩ pull-down  
protection resistor should be added to the  
CS pin.  
After power-up, the device is automatically in the  
EWDS mode. Therefore, an EWENinstruction must be  
performed before the initial ERASEor WRITEinstruction  
can be executed.  
3.1  
Start Condition  
The Start bit is detected by the device if CS and DI are  
both high with respect to the positive edge of CLK for  
the first time.  
Note:  
To prevent accidental writes to the array in  
the 93XX76C/86C devices, set the PE pin  
to a logic low.  
Before a Start condition is detected, CS, CLK and DI  
may change in any combination (except to that of a  
Start condition), without resulting in any device  
operation (Read, Write, Erase, EWEN, EWDS, ERAL  
or WRAL). As soon as CS is high, the device is no  
longer in Standby mode.  
Block Diagram  
VCC  
VSS  
HV Generator  
An instruction following a Start condition will only be  
executed if the required opcode, address and data bits  
for any particular instruction are clocked in.  
X
EEPROM  
Array  
Memory  
Control  
Logic  
Note:  
When preparing to transmit an instruction,  
either the CLK or DI signal levels must be  
at a logic low as CS is toggled active high.  
I/O Control  
Logic  
Dec  
Byte Latches  
3.2  
Data In/Data Out (DI/DO)  
It is possible to connect the Data In and Data Out pins  
together. However, with this configuration it is possible  
for a “bus conflict” to occur during the “dummy zero”  
that precedes the read operation, if A0 is a logic high  
level. Under such a condition the voltage level seen at  
Data Out is undefined and will depend upon the relative  
impedances of Data Out and the signal source driving  
A0. The higher the current sourcing capability of the  
driver, the higher the voltage at the Data Out pin. In  
order to limit this current, a resistor should be  
connected between DI and DO.  
Y Decoder  
DI  
DO  
CS  
Sense Amp.  
R/W Control  
CLK  
ORG  
(1)  
(2)  
PE  
Note 1: ORG pin: Only on 93XX46C/56C/66C/76C/86C.  
2: PE pin: Only on 93XX76C/86C.  
DS21929D-page 10  
© 2007 Microchip Technology Inc.