11AAXXX/11LCXXX
1.0
ELECTRICAL CHARACTERISTICS
(†)
Absolute Maximum Ratings
VCC.............................................................................................................................................................................6.5V
SCIO w.r.t. VSS.....................................................................................................................................-0.6V to VCC+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias...............................................................................................................-40°C to 125°C
ESD protection on all pins..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Electrical Characteristics:
Industrial (I):
Automotive (E):
Min.
VCC = 2.5V to 5.5V
VCC = 1.8V to 2.5V
VCC = 2.5V to 5.5V
TA = -40°C to +85°C
TA = -20°C to +85°C
TA = -40°C to +125°C
DC CHARACTERISTICS
Param.
No.
Sym.
Characteristic
Max.
VCC+1
Units
Test Conditions
D1
VIH
High-level input
voltage
0.7*VCC
V
D2
D3
D4
D5
D6
D7
D8
VIL
VHYS
VOH
VOL
IO
Low-level input
voltage
-0.3
-0.3
0.3*VCC
0.2*VCC
V
V
VCC2.5V
VCC < 2.5V
Hysteresis of Schmitt 0.05*Vcc
Trigger inputs (SCIO)
—
V
VCC2.5V (Note 1)
High-level output
voltage
VCC -0.5
VCC -0.5
—
—
V
V
IOH = -300 A, VCC = 5.5V
IOH = -200 A, Vcc = 2.5V
Low-level output
voltage
—
—
0.4
0.4
V
V
IOI = 300 A, VCC = 5.5V
IOI = 200 A, Vcc = 2.5V
Output current limit
(Note 2)
—
—
±4
±3
mA
mA
VCC = 5.5V (Note 1)
Vcc = 2.5V (Note 1)
ILI
Input leakage current
(SCIO)
—
±1
A
VIN = VSS or VCC
CINT
Internal Capacitance
(all inputs and
outputs)
—
7
pF
TA = 25°C, FCLK = 1 MHz,
VCC = 5.0V (Note 1)
D9
ICC Read Read Operating
Current
—
—
3
1
mA
mA
VCC=5.5V; FBUS=100 kHz, CB=100 pF
VCC=2.5V; FBUS=100 kHz, CB=100 pF
D10 ICC Write Write Operating
Current
—
—
5
3
mA
mA
VCC = 5.5V
VCC = 2.5V
D11
Iccs
Standby Current
—
5
A
VCC = 5.5V
TA = 125°C
—
—
1
A
A
VCC = 5.5V
TA = 85°C
D12
ICCI
Idle Mode Current
50
VCC = 5.5V
Note 1: This parameter is periodically sampled and not 100% tested.
2: The SCIO output driver impedance will vary to ensure IO is not exceeded.
2010 Microchip Technology Inc.
Preliminary
DS22067H-page 3
MICROCHIP [ MICROCHIP ]
