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11LC040T-I/TT 参数 Datasheet PDF下载

11LC040T-I/TT图片预览
型号: 11LC040T-I/TT
PDF下载: 下载PDF文件 查看货源
内容描述: 1K - 16K UNI / O ?串行EEPROM系列数据手册 [1K-16K UNI/O® Serial EEPROM Family Data Sheet]
分类和应用: 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 38 页 / 571 K
品牌: MICROCHIP [ MICROCHIP ]
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11AAXXX/11LCXXX  
After transmitting the STATUS register data, the master  
must transmit a NoMAK during the Acknowledge  
sequence in order to initiate the internal write cycle.  
4.6  
Write Status Register (WRSR)  
Instruction  
The WRSRinstruction allows the user to select one of  
four levels of protection for the array by writing to the  
appropriate bits in the STATUS register. The array is  
divided up into four segments. The user has the ability  
to write-protect none, one, two, or all four of the seg-  
ments of the array. The partitioning is controlled as  
illustrated in Table 4-3.  
Note: The WRSR instruction must be termi-  
nated with a NoMAK following the data  
byte. If a NoMAK is not received at this  
point, the command will be considered  
invalid, and the device will go into Idle  
mode without responding with a SAK or  
executing the command.  
TABLE 4-3:  
BP1  
ARRAY PROTECTION  
BP0  
Address Ranges Write-Protected  
Address Ranges Unprotected  
0
0
1
1
0
1
0
1
None  
Upper 1/4  
Upper 1/2  
All  
All  
Lower 3/4  
Lower 1/2  
None  
TABLE 4-4:  
PROTECTED ARRAY ADDRESS LOCATIONS  
Density  
Upper 1/4  
Upper 1/2  
All Sectors  
1K  
2K  
4K  
8K  
60h-7Fh  
C0h-FFh  
40h-7Fh  
80h-FFh  
00h-7Fh  
00h-FFh  
180h-1FFh  
300h-3FFh  
600h-7FFh  
100h-1FFh  
200h-3FFh  
400h-7FFh  
000h-1FFh  
000h-3FFh  
000h-7FFh  
16K  
FIGURE 4-7:  
WRITE STATUS REGISTER COMMAND SEQUENCE  
Device Address  
Standby Pulse  
Start Header  
SCIO  
SCIO  
0 1 0 1 0 1 0 1  
1 0 1 0 0 0 0 0  
Command  
Status Register Data  
7 6 5 4 3 2 1 0  
Twc  
0 1 1 0 1 1 1 0  
© 2008 Microchip Technology Inc.  
Preliminary  
DS22067E-page 15  
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